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A Model For The Voltammetric Behaviour Of Tio2 Memristors, John Cassidy, Daryl Fox, Tony Betts
A Model For The Voltammetric Behaviour Of Tio2 Memristors, John Cassidy, Daryl Fox, Tony Betts
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Abstract A model is solved based on the Nernst Planck equation to calculate the diffusion and migration currents for a species in a thin layer (about 200 nm) confined between two electrodes. This is proposed to account for the current voltage behaviour of a memristor constructed in a similar fashion. At the working electrode, an electroactive species is oxidised and at the counter electrode, the same species is reduced. Upon application of a simple voltammetric waveform, the migration current exhibits a resistance profile at slow scan rates and hysteresis at faster scan rates, indicative of memristor behavior.