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Improving Current-Asymmetry Of Metal-Insulator-Metal Tunnel Junctions, Aparajita Singh
Improving Current-Asymmetry Of Metal-Insulator-Metal Tunnel Junctions, Aparajita Singh
FIU Electronic Theses and Dissertations
In this research, Ni–NiOx–Cr and Ni–NiOx–ZnO–Cr metal-insulator-metal (MIM) junction based tunnel diodes have been investigated for the purpose of a wide-band detector. An MIM diode has a multitude of applications such as harmonic mixers, rectifiers, millimeter wave and infrared detectors. Femtosecond-fast electron transport in MIM tunnel diodes also makes them attractive for energy-harvesting devices. These applications require the tunnel diodes to have high current-asymmetry and non-linear current-voltage behavior at low applied voltages and high frequencies. Asymmetric and non-linear characteristics of Ni–NiOx-Cr MIM tunnel diodes were enhanced in this research by the addition of ZnO as a second insulator layer in …
Growth, Characterization And Simulation Of Tungsten Selenide Thin Films For Photovoltaic Applications, Qinglei Ma
Growth, Characterization And Simulation Of Tungsten Selenide Thin Films For Photovoltaic Applications, Qinglei Ma
Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research
An excellent candidate for an earth abundant absorber material is tungsten selenide (WSe2) which can be directly grown as a p-type semiconductor with a band gap value that matches well the solar spectrum. Although several fabrication methods were reported, further improvement is highly needed to make high quality WSe2 films. In addition, the numerical modelling of WSe2 solar devices is highly desired to assess the overall utility of the material. In this work, the growth and characterization of tungsten selenide thin films are investigated, as well simulations of homo- and hetero-junction devices. In the first part, …