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The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
The Microstructure And Grain Size Of Jet Electroplated Copper Films In Damascene Trench Features, Andrew Tzanavaras, Gregory Young, Stacy H. Gleixner
Faculty Publications
The brightening additive level and dc current density of electroplating baths are two parameters that affect the gap-filling capability and the degree of impurity incorporation in electroplated copper films. Additive incorporation can inhibit grain growth during the room temperature recrystallization process and therefore affect the final grain size. This investigation explores the grain size and microstructure of dc jet-electroplated copper films in 0.35 and 0.50μm Damascene trenches as a function of current density and brightening additive level after first receiving a high-temperature anneal. Unlike a previous study that explored these variables in blanket Cu films [ J. Electrochem. Soc. , …
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
The Grain Size And Microstructure Of Jet-Electroplated Damascene Copper Films, Stacy H. Gleixner, Andrew Tzanavaras, Gregory Young
Faculty Publications
Electroplated damascene copper is rapidly replacing aluminum-copper alloys for on-chip interconnect metallization in advanced ultralarge scale integrated (ULSI) semiconductor devices. In addition to a high degree of (111) crystallographic texture, large defect-free grains are desired to enhance the performance and reliability of copper interconnects in such devices. The brightening additive level and dc current density of electroplating baths are two parameters that affect the process gap-filling capability and the degree of additive incorporation in these copper films. Additive incorporation can inhibit grain growth during the room-temperature recrystallization process and therefore affect the final grain size in electroplated copper films. This …
Derivation Of An Analytical Model To Calculate Junction Depth In Hgcdte Photodiodes, Stacy H. Gleixner, H. G. Robinson, C. R. Helms
Derivation Of An Analytical Model To Calculate Junction Depth In Hgcdte Photodiodes, Stacy H. Gleixner, H. G. Robinson, C. R. Helms
Faculty Publications
Presents an enhanced analytical model to calculate junction depth and Hg interstitial profile during n-on-p junction formation in HgCdTe photodiodes. Detailed information on the enhanced model; Function of the model; Information on HgCdTe; Detailed information on how the model was obtained.