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Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Theses and Dissertations
Microscale beams of germanium ions were used to target different locations of aluminum galliumnitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) to determine location dependent radiation effects. 1.7 MeV Ge ions were targeted at the gap between the gate and the drain to observe displacement damage effects while 47 MeV Ge ions were targeted at the gate to observe ionization damage effects. Electrical data was taken pre, during, and post irradiation. To separate transient from permanent degradation, the devices were characterized after a room temperature anneal for at least 30 days. Optical images were also analyzed pre and post irradiation. …
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed
Theses and Dissertations
Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …