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Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Targeted Germanium Ion Irradiation Of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistors, Melanie E. Mace
Theses and Dissertations
Microscale beams of germanium ions were used to target different locations of aluminum galliumnitride/gallium nitride (AlGaN/GaN) high electron mobility transistors (HEMTs) to determine location dependent radiation effects. 1.7 MeV Ge ions were targeted at the gap between the gate and the drain to observe displacement damage effects while 47 MeV Ge ions were targeted at the gate to observe ionization damage effects. Electrical data was taken pre, during, and post irradiation. To separate transient from permanent degradation, the devices were characterized after a room temperature anneal for at least 30 days. Optical images were also analyzed pre and post irradiation. …
M2 Factor Of A Vector Schell-Model Beam, Milo W. Hyde Iv, Mark F. Spencer
M2 Factor Of A Vector Schell-Model Beam, Milo W. Hyde Iv, Mark F. Spencer
Faculty Publications
Extending existing scalar Schell-model source work, we derive the M2 factor for a general electromagnetic or vector Schell-model source to assess beam quality. In particular, we compute the M2 factors for two vector Schell-model sources found in the literature. We then describe how to synthesize vector Schell-model beams in terms of specified, desired M2 and present Monte Carlo simulation results to validate our analysis.