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Full-Text Articles in Engineering
Design And Fabrication Of Ring Gate Surface Junction Tunneling Devices, Eliott R. Hughes
Design And Fabrication Of Ring Gate Surface Junction Tunneling Devices, Eliott R. Hughes
Journal of the Microelectronic Engineering Conference
Silicon based ring gate surface junction tunneling devices (SJT) were studied due to their promise of incorporating quantum functional devices with integrated circuits. SJT devices of various gate lengths ranging from 1 μm to 50 μm were designed using Mentor Graphics tools, and were fabricated using standard CMOS processes on S1MOX substrates. SIMOX wafers were used to help reduce bulk leakage and enhance the drain impurity profile. SIMOX mesa isolation also significantly reduced the process flow.
The Beneficial Effects Of Thin Film Stress In The Fabrication Of A Mems Device, Justin E. Brown
The Beneficial Effects Of Thin Film Stress In The Fabrication Of A Mems Device, Justin E. Brown
Journal of the Microelectronic Engineering Conference
Microelectromechanical systems (MEMS) are playing an increasing role in the semiconductor industry today. The modeling and manufacturing of mechanical devices on a microscopic level have made their way from the area of singularly fabricated devices for research into the bulk processing of the commercial market Many of these commercial devices are of the optical variety. And there has also been successful work done in combining integrated circuits with MEMS. Presented here is a process for the fabrication of an optical device called a microshutter. The device consists of a moveable electrode constructed of a stack of Si02/Al/SiO2 …