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Articles 1 - 30 of 35
Full-Text Articles in Engineering
High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
High-Quality P-N Junctions With Quaternary Alingan/Ingan Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur
Faculty Publications
We report on quaternary AlInGaN/InGaN multiple quantum well(MQW)light emitting diode structures grown on sapphire substrates. The structures demonstrate high quality of the p–njunctions with quaternary MQW. At low forward bias (below 2 V), the temperature dependent of current–voltage characteristics are exponential with the ideality factor of 2.28, which is in a good agreement with the model of the injected carrier recombination in the space charge region. This ideality factor value is approximately three times lower than for conventional GaN/InGaN light emitting diodes(LEDs). The obtained data indicate the recombination in p–njunction space charge region to be responsible for a current transport …
Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Effect Of Gate Leakage Current On Noise Properties Of Algan/Gan Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, J. Yang
Faculty Publications
The effect of the gate leakage current fluctuations on noiseproperties of AlGaN/GaN heterostructurefield effect transistors(HFETs) has been studied in conventional HFET structures and in AlGaN/GaN metal-oxide-semiconductorheterostructurefield effect transistors (MOS-HFETs). The comparison of the noiseproperties of conventional AlGaN/GaN HFETs and AlGaN/GaN MOS-HFETs fabricated on the same wafer, allowed us to estimate the contribution of the gate currentnoise to the HFET’s output noise. The effect of the gate current fluctuations on output noiseproperties of HFETs depends on the level of noise in the AlGaN/GaN HFETs. For the transistors with a relatively high magnitude of the Hooge parameter α∼10−3, even a …
High Performance Micropane Electron Beam Window, Roger A. Dougal, Shengyi Liu
High Performance Micropane Electron Beam Window, Roger A. Dougal, Shengyi Liu
Faculty Publications
A silicon disk etched so that it contains a multitude of microscopic and thin window panes (micropanes) can potentially transmit a larger average electron beam current density and absorb a smaller fraction of the beam energy than a common metal foil window. The enhanced performance is achieved by a combination of decreased power loss due to the extremely small window thickness (~1 μm), and increased conductive cooling due to the small diameter (~50 μm) of the micropanes and the large cross section of the honeycomb structure that supports the micropanes. Beam current densities up to 34 A/cm2 are permitted within …
Hop Integrity In Computer Networks, Mohamed G. Gouda, E.N. Elnozahy, Chin-Tser Huang, Tommy M. Mcguire
Hop Integrity In Computer Networks, Mohamed G. Gouda, E.N. Elnozahy, Chin-Tser Huang, Tommy M. Mcguire
Faculty Publications
A computer network is said to provide hop integrity iff when any router p in the network receives a message m supposedly from an adjacent router q, then p can check that m was indeed sent by q, was not modified after it was sent, and was not a replay of an old message sent from q to p. We describe three protocols that can be added to the routers in a computer network so that the network can provide hop integrity. These three protocols are a secret exchange protocol, a weak integrity protocol, and a strong integrity protocol. All …
Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Enhanced Luminescence In Ingan Multiple Quantum Wells With Quaternary Alingan Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, R. Gaska
Faculty Publications
We report on the comparative photoluminescence studies of AlGaN/GaN, GaN/InGaN, and AlInGaN/InGaN multiple quantum well(MQW) structures. The study clearly shows the improvement in materials quality with the introduction of indium. Our results point out the localized state emission mechanism for GaN/InGaN structures and the quantum well emission mechanism for AlInGaN/InGaN structures. The introduction of indium is the dominant factor responsible for the observed differences in the photoluminescence spectra of these MQW structures.
High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
High Electron Mobility In Algan/Gan Heterostructures Grown On Bulk Gan Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, D. Maude
Faculty Publications
Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The …
Preparation Of Mesoporous Sno2-Sio2 Composite As Electrodes For Lithium Batteries, Fanglin Chen, Zhong Shi, Meilin Liu
Preparation Of Mesoporous Sno2-Sio2 Composite As Electrodes For Lithium Batteries, Fanglin Chen, Zhong Shi, Meilin Liu
Faculty Publications
Mesoporous SnO2–SiO2 composite stable up to 600 °C with a BET surface area of 350 m2 g-1 and an average pore size of 3.4 nm is successfully prepared, which exhibits promising cycling properties as anodes for lithium batteries
Preparation Of Mesoporous Yttria-Stabilized Zirconia (Ysz) And Ysz-Nio Using A Triblock Copolymer As Surfactant, Fanglin Chen, Meilin Liu
Preparation Of Mesoporous Yttria-Stabilized Zirconia (Ysz) And Ysz-Nio Using A Triblock Copolymer As Surfactant, Fanglin Chen, Meilin Liu
Faculty Publications
Mesoporous yttria-stabilized zirconia (YSZ) and YSZ-NiO have been prepared for the first time using Pluronic P103 as a structure-directing agent and inorganic chlorides as precursors in a nonaqueous medium. After being fired at 500°C for 2 h, mesostructured YSZ has a BET surface area of about 146 m2 g-1, with an average pore size of 3.8 nm, while mesostructured YSZ-NiO has a BET surface area of about 108 m2 g-1, with an average pore size of 4.5 nm.
Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Optical Bandgap Formation In Alingan Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, R. Gaska
Faculty Publications
We report on the spectral dynamics of the reflectivity, site-selectively excited photoluminescence,photoluminescence excitation, and time-resolved luminescence in quaternary AlInGaN epitaxial layers grown on GaN templates. The incorporation of a few percents of In into AlGaN causes significant smoothening of the band-bottom potential profile in AlInGaN layers owing to improved crystal quality. An abrupt optical bandgap indicates that a nearly lattice-matched AlInGaN/GaN heterostructure with large energy band offsets can be grown for high-efficiency light-emitting devices.
Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Algan/Gan Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors On Sic Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, M. S. Shur
Faculty Publications
We report on AlGaN/GaN metal–oxide–semiconductor heterostructurefield-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaNheterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 …
Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Sio2-Passivated Lateral-Geometry Gan Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, R. Gaska
Faculty Publications
We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO2 surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10−23 A2/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.
Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu
Gan-Algan Heterostructure Field-Effect Transistors Over Bulk Gan Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, G. Neu
Faculty Publications
We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm2/V s combined with a very large electron sheet density ns≈1.4×1013 cm−2.The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(nsμ>2×1016 V−1 s−1) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in …
Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Accumulation Hole Layer In P-Gan/Algan Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, M. A. Khan
Faculty Publications
We present the results on piezoelectric and pyroelectricdoping in AlGaN-on-GaN and GaN-on-AlGaN heterostructures and demonstrate p-GaN/AlGaN structures with accumulation hole layer. Our results indicate that polarization charge can induce up to 5×1013 cm−2 holes at the AlGaN/GaN heterointerfaces. We show that the transition from three-dimensional (3D) to two-dimensional (2D) hole gas can be only achieved for hole sheet densities on the order of 1013 cm−2 or higher. At lower densities, only 3D-hole accumulation layer may exist. These results suggest that a piezoelectrically induced 2D-hole gas can be used for the reduction of the base spreading resistance …
3d Outside Cell Interference Factor For An Air-Ground Cdma ‘Cellular’ System, David W. Matolak
3d Outside Cell Interference Factor For An Air-Ground Cdma ‘Cellular’ System, David W. Matolak
Faculty Publications
We compute the outside-cell interference factor of a code-division multiple-access (CDMA) system for a three-dimensional (3-D) air-to-ground (AG) "cellular-like" network consisting of a set of uniformly distributed ground base stations and airborne mobile users. The CDMA capacity is roughly inversely proportional to the outside-cell interference factor. It is shown that for the nearly free-space propagation environment of these systems, the outside-cell interference factor can be larger than that for terrestrial propagation models (as expected) and depends approximately logarithmically upon both the cell height and cell radius.
Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius
Lattice And Energy Band Engineering In Alingan/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad Zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, R. Bicknell-Tassius
Faculty Publications
We report on structural, optical, and electrical properties of AlxInyGa1−x−yNGaNheterostructures grown on sapphire and 6H–SiC substrates. Our results demonstrate that incorporation of In reduces the lattice mismatch, Δa, between AlInGaN and GaN, and that an In to Al ratio of close to 1:5 results in nearly strain-free heterostructures. The observed reduction in band gap,ΔEg, determined from photoluminescence measurements, is more than 1.5 times higher than estimated from the linear dependencies of Δa and ΔEg on the In molar fraction. The incorporation of In and resulting changes in the built-in strain in …
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Selective Area Deposited Blue Gan-Ingan Multiple-Quantum Well Light Emitting Diodes Over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, R. Gaska
Faculty Publications
We report on fabrication and characterization of blue GaN–InGaN multi-quantum well (MQW)light-emitting diodes(LEDs) over (111) silicon substrates. Device epilayers were fabricated using unique combination of molecular beam epitaxy and low-pressure metalorganic chemical vapor depositiongrowth procedure in selective areas defined by openings in a SiO2mask over the substrates. This selective area deposition procedure in principle can produce multicolor devices using a very simple fabrication procedure. The LEDs had a peak emission wavelength of 465 nm with a full width at half maximum of 40 nm. We also present the spectral emission data with the diodes operating up to 250 …
Shrinking Core Model For The Discharge Of A Metal Hydride Electrode, Venkat R. Subramanian, Harry J. Ploehn, Ralph E. White
Shrinking Core Model For The Discharge Of A Metal Hydride Electrode, Venkat R. Subramanian, Harry J. Ploehn, Ralph E. White
Faculty Publications
A shrinking core model is presented for the galvanostatic discharge of a metal hydride particle. A quantitative criterion for when the shrinking core can be completely neglected or approximated by a pseudosteady-state solution is presented. The effect of shrinking of the core on the discharge behavior of a metal hydride particle is also studied.
Modeling The Effect Of Plasticizer On The Viscoelastic Response Of Crosslinked Polymers Using The Tube-Junction Model, P. P. Simon, Harry J. Ploehn
Modeling The Effect Of Plasticizer On The Viscoelastic Response Of Crosslinked Polymers Using The Tube-Junction Model, P. P. Simon, Harry J. Ploehn
Faculty Publications
Plasticizers modify the mechanical properties of polymericmaterials. The effects of plasticizers on glass transition temperatures can be most clearly observed in isochronal temperature sweep profiles of viscoelastic dynamic moduli. However, no simple mathematical models of plasticization are available to those who wish to design and employ plasticized materials in specific applications. We extend a phenomenological, molecular-level model (known as the tube–junction model) for crosslinked polymers to describe the effect of plasticizers on dynamic moduli. We show that the increase in free volume fraction due to the presence of the plasticizer can account for the shift in the glass transition in …
Self‐Discharge Model Of A Nickel‐Hydrogen Cell, B. Wu, Ralph E. White
Self‐Discharge Model Of A Nickel‐Hydrogen Cell, B. Wu, Ralph E. White
Faculty Publications
No abstract provided.
Oxygen Diffusion Coefficient And Solubility In A New Proton Exchange Membrane, Andrew T. Haug, Ralph E. White
Oxygen Diffusion Coefficient And Solubility In A New Proton Exchange Membrane, Andrew T. Haug, Ralph E. White
Faculty Publications
No abstract provided.
A Semianalytical Method For Predicting Primary And Secondary Current Density Distributions: Linear And Nonlinear Boundary Conditions, Dhanwa Thirumalai, Ralph E. White
A Semianalytical Method For Predicting Primary And Secondary Current Density Distributions: Linear And Nonlinear Boundary Conditions, Dhanwa Thirumalai, Ralph E. White
Faculty Publications
No abstract provided.
Development Of A New Electrodeposition Process For Plating Of Zn‐Ni‐X (X = Cd, P) Alloys: I. Corrosion Characteristics Of Zn‐Ni‐Cd Ternary Alloys, Anand Durairajan, Bala S. Haran, Ralph E. White, Branko Popov
Development Of A New Electrodeposition Process For Plating Of Zn‐Ni‐X (X = Cd, P) Alloys: I. Corrosion Characteristics Of Zn‐Ni‐Cd Ternary Alloys, Anand Durairajan, Bala S. Haran, Ralph E. White, Branko Popov
Faculty Publications
No abstract provided.
Computational Fluid Dynamics Modeling Of A Lithium/Thionyl Chloride Battery With Electrolyte Flow, W. B. Gu, C. Y. Wang, John W. Weidner, Rudolph G. Jungst, Ganesan Nagasubramanian
Computational Fluid Dynamics Modeling Of A Lithium/Thionyl Chloride Battery With Electrolyte Flow, W. B. Gu, C. Y. Wang, John W. Weidner, Rudolph G. Jungst, Ganesan Nagasubramanian
Faculty Publications
A two-dimensional model is developed to simulate discharge of a lithium/thionyl chloride primary battery. As in earlier one-dimensional models, the model accounts for transport of species and charge, and electrode porosity variations and electrolyte flow induced by the volume reduction caused by electrochemical reactions. Numerical simulations are performed using a finite volume method of computational fluid dynamics. The predicted discharge curves for various temperatures show good agreement with published experimental data, and are essentially identical to results published for one-dimensional models. The detailed two-dimensional flow simulations show that the electrolyte is replenished from the cell head space predominantly through the …
Studies On The Capacitance Of Nickel Oxide Films: Effect Of Heating Temperature And Electrolyte Concentration, Venkat Srinivasan, John W. Weidner
Studies On The Capacitance Of Nickel Oxide Films: Effect Of Heating Temperature And Electrolyte Concentration, Venkat Srinivasan, John W. Weidner
Faculty Publications
Nickel oxide films were prepared by electrochemically precipitating the hydroxide and heating it in air to form the oxide. The resulting oxide films behave as a capacitor. The capacitance of the oxide depends on the heating temperature, showing a maximum at 300°C. The mechanism of charge storage was studied by measuring the capacitance and surface area as a function of heating temperature, and the capacitance in different electrolytes and potential windows. The charge-storage mechanism is believed to be a surface redox reaction involving adsorbed hydroxyl ions.
Diffusion Of Water In Nafion 115 Membranes, Sathya Motupally, Aaron J. Becker, John W. Weidner
Diffusion Of Water In Nafion 115 Membranes, Sathya Motupally, Aaron J. Becker, John W. Weidner
Faculty Publications
In this paper, experimental and simulated data for the diffusion of water across Nafion membranes as a function of the water activity gradient are presented. The gradient in the activity of water across the membrane was varied by changing the flow rate and pressure of nitrogen gas on one side of the membrane. The other side of the membrane was equilibrated with liquid water. It was found that the model predictions are very sensitive to the value of the diffusion coefficient of water in Nafion. Using the Fickian diffusion coefficient extracted from self-diffusion measurements reported in the literature, the model …
Development Of A New Electrodeposition Process For Plating Of Zn-Ni-X (X = Cd, P) Alloys: I. Corrosion Characteristics Of Zn-Ni-Cd Ternary Alloys, Anand Durairajan, Bala S. Haran, Ralph E. White, Branko N. Popov
Development Of A New Electrodeposition Process For Plating Of Zn-Ni-X (X = Cd, P) Alloys: I. Corrosion Characteristics Of Zn-Ni-Cd Ternary Alloys, Anand Durairajan, Bala S. Haran, Ralph E. White, Branko N. Popov
Faculty Publications
A new Zn-Ni-Cd plating process was developed which offers a unique way of controlling and optimizing the Ni and Cd contents in the final deposit. Zinc-nickel-cadmium alloy was deposited from a 0.5 M NiSO4 + 0.2 M ZnSO4 bath in the presence of 0.015 M CdSO4 and 1 g/L nonyl phenyl polyethylene oxide. Using this process a Zn-Ni-Cd ternary alloy, with a higher nickel content as compared to that obtained from conventional Zn-Ni baths, was synthesized. The Zn-Ni-Cd alloy coatings deposited from an electrolyte containing 0.015 M (0.3%) CdSO4 has a Zn to Ni ratio of …
Ni-Composite Microencapsulated Graphite As The Negative Electrode In Lithium-Ion Batteries Ii: Electrochemical Impedance And Self-Discharge Studies, P. Yu, James A. Ritter, Ralph E. White, Branko N. Popov
Ni-Composite Microencapsulated Graphite As The Negative Electrode In Lithium-Ion Batteries Ii: Electrochemical Impedance And Self-Discharge Studies, P. Yu, James A. Ritter, Ralph E. White, Branko N. Popov
Faculty Publications
Electrochemical impedance and self-discharge studies were carried out to investigate lithium intercalation into bare and Ni-coated KS10 graphite. Values of the charge-transfer resistances, exchange current densities, surface film resistances, and lithium-ion diffusion coefficients as functions of the state of charge (SOC) all favored the 10 wt % Ni composite KS10 graphite over bare KS10 graphite when these materials were used as the negative electrode in a Li-ion cell with mixed organic electrolyte. The charge-transfer resistances were always lower and gave rise to between 26 and 27% larger exchange current densities, which increased from 137 to 614 mA/g as the SOC …
Modeling Lithium Intercalation Of A Single Spinel Particle Under Potentiodynamic Control, Dong Zhang, Branko N. Popov, Ralph E. White
Modeling Lithium Intercalation Of A Single Spinel Particle Under Potentiodynamic Control, Dong Zhang, Branko N. Popov, Ralph E. White
Faculty Publications
A mathematical model is presented for the lithium intercalation of a single spinel particle as a microelectrode under the stimulus of a cyclic linear potential sweep. The model includes both lithium diffusion within the particle and kinetics at the particle/electrolyte interface. The model is used to predict that peak current densities depend linearly on the scan rate to a certain power with a constant term, which is different from the predicted peak current density for a conventional redox system.
Development Of A New Electrodeposition Process For Plating Of Zn-Ni-X (X = Cd, P) Alloys: Permeation Characteristics Of Zn-Ni-Cd Ternary Alloys, A. Durairajan, B. S. Haran, Ralph E. White, Branko N. Popov
Development Of A New Electrodeposition Process For Plating Of Zn-Ni-X (X = Cd, P) Alloys: Permeation Characteristics Of Zn-Ni-Cd Ternary Alloys, A. Durairajan, B. S. Haran, Ralph E. White, Branko N. Popov
Faculty Publications
It is shown that an electrodeposited Zn-Ni-Cd alloy coating produced from sulfate electrolyte inhibits the discharge of hydrogen on carbon steel. The newly developed ternary alloys have approximately ten times higher corrosion resistance when compared to a Zn-Ni alloy. Hydrogen permeation characteristics of Zn-Ni-Cd alloy coatings were studied and compared with those of a bare and a Zn-Ni alloy coated steel. The transfer coefficient, a, exchange current density, io, thickness dependent adsorption-absorption rate constant, k0, recombination rate constant, k3, surface hydrogen coverage, θH, were obtained by applying a mathematical model to experimental results. Alloys obtained from baths containing higher concentration …
Modeling The Effects Of Ion Association On Direct-Current Polarization Of Solid Polymer Electrolytes, Changqing Lin, Ralph E. White, Harry J. Ploehn
Modeling The Effects Of Ion Association On Direct-Current Polarization Of Solid Polymer Electrolytes, Changqing Lin, Ralph E. White, Harry J. Ploehn
Faculty Publications
Considerable experimental evidence indicates that ion association occurs in solid polymer electrolytes. This work provides a thorough theoretical analysis of the effect of ion association on the conductivity, general current-potential behavior, and limiting current density in a solid polymer electrolyte. The model employs dilute solution theory to describe the fluxes of cations, anions, and ion pairs in a motionless continuum but neglects higher order association. The predictions of the model highlight the effects of the relative diffusion coefficients and dimensionless association constant on concentration distributions of simple ions and ion pairs, the limiting current density, and the potential drop required …