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Full-Text Articles in Engineering
Characterization And Estimation Of Musculoskeletal Pain Using Machine Learning, Boluwatife Faremi
Characterization And Estimation Of Musculoskeletal Pain Using Machine Learning, Boluwatife Faremi
Master's Theses
Traditional scales utilized for recording pain are known to be highly subjective and biased due to inaccuracies in recollecting actual pain intensities. As a result, machine learning (ML) models that are trained using these scores as ground truth are reported to have low performance for objective pain classification because of the huge disparity between what was felt in moments of pain and the scores recorded afterward.
In the present study, two devices were designed for gathering real-time, continuous in-session subjective pain scores and the recording of the autonomic nervous system (ANS) altered endodermal (EDA) activity. 24 participants were recruited to …
Characterization Of Flexible Hybrid Electronics Using Stretchable Silver Ink And Ultra-Thin Silicon Die, Joshua A. Ledgerwood
Characterization Of Flexible Hybrid Electronics Using Stretchable Silver Ink And Ultra-Thin Silicon Die, Joshua A. Ledgerwood
Master's Theses
Flexible Hybrid Electronics (FHEs) offer many advantages to the future of wearable technology. By combining the dynamic performance of conductive inks, and the functionality of ultra-thinned, traditional IC technology, new FHE devices allow for development of applications previously excluded by relying on a specific type of electronics technology.
The characterization and reliability analysis of stretchable conductive inks paired with ultra-thin silicon die in theµm range was conducted. A silver based ink designed to be stretchable was screen printed on a TPU substrate and cured using box oven, conveyor convection oven, and photonic curing processes. Reliability tests were conducted including a …
Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom
Dc, Rf, And Thermal Characterization Of High Electric Field Induced Degradation Mechanisms In Gan-On-Si High Electron Mobility Transistors, Matthew Anthony Bloom
Master's Theses
Gallium Nitride (GaN) high electron mobility transistors (HEMTs) are becoming increasingly popular in power amplifier systems as an alternative to bulkier vacuum tube technologies. GaN offers advantages over other III-V semiconductor heterostructures such as a large bandgap energy, a low dielectric constant, and a high critical breakdown field. The aforementioned qualities make GaN a prime candidate for high-power and radiation-hardened applications using a smaller form-factor. Several different types of semiconductor substrates have been considered for their thermal properties and cost-effectiveness, and Silicon (Si) has been of increasing interest due to a balance between both factors.
In this thesis, the DC, …