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Electrical and Computer Engineering

Selected Works

Vincent G. Harris

2012

4πMs

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Full-Text Articles in Engineering

Structure, Magnetic, And Microwave Properties Of Thick Ba-Hexaferrite Films Epitaxially Grown On Gan/Al₂O₃ Substrates, Z. Chen, A. Yang, K. Mahalingam, K. L. Averett, J. Gao, G. J. Brown, C. Vittoria, V. G. Harris Apr 2012

Structure, Magnetic, And Microwave Properties Of Thick Ba-Hexaferrite Films Epitaxially Grown On Gan/Al₂O₃ Substrates, Z. Chen, A. Yang, K. Mahalingam, K. L. Averett, J. Gao, G. J. Brown, C. Vittoria, V. G. Harris

Vincent G. Harris

Thick barium hexaferrite [BaO∙(Fe₂O₃)₆] films, having the magnetoplumbite structure (i.e., Ba M), were epitaxially grown on c-axis oriented GaN/Al₂O₃ substrates by pulsed laser deposition followed by liquid phase epitaxy. X-ray diffraction showed (0,0,2n) crystallographic alignment with pole figure analyses confirming epitaxial growth. High resolution transmission electron microscopy images revealed magnetoplumbite unit cells stacked with limited interfacial mixing. Saturation magnetization, 4πMs, was measured for as-grown films to be 4.1 ± 0.3 kG with a perpendicular magnetic anisotropy field of 16 ± 0.3 kOe. Ferromagnetic resonance linewidth, the peak-to-peak power absorption derivative at 53 GHz, was 86 Oe. These properties will prove …