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The Effect Of Solution Ph On The Properties Of Cobalt Oxide Thin Films Prepared By Nebulizer Spray Pyrolysis Technique, M. Manickam, V. Ponnuswamy, C. Sankar, R. Suresh, R. Mariappan, J. Chandrasekaran
The Effect Of Solution Ph On The Properties Of Cobalt Oxide Thin Films Prepared By Nebulizer Spray Pyrolysis Technique, M. Manickam, V. Ponnuswamy, C. Sankar, R. Suresh, R. Mariappan, J. Chandrasekaran
International Journal of Thin Film Science and Technology
Single-phase cubic structured Cobalt oxide thin films were deposited on preheated glass substrates by Nebulizer Spray Pyrolysis (NSP) technique with different solution pH. The structural, optical, morphological and electrical properties were investigated. Cubic structured crystallites are detected by XRD pattern with preferential orientation along (220) direction. The transmittance of Co3O4 films increases with the increase of solution pH. The obtained bandgap values of Co3O4 films are found to be in the range 2.105 - 2.347 eV and 1.74 – 1.806 eV for higher and lower energy regions respectively. HRSEM images reveal the different morphologies like sphere-shaped particles, hexagonal shaped particles …
Influence Of Substrate Temperature On Physical Properties Of Nanostructured Ti Doped In2o3 Thin Films By A Simplified Perfume Atomizer Technique, V. Sivaranjani, P. Philominathan
Influence Of Substrate Temperature On Physical Properties Of Nanostructured Ti Doped In2o3 Thin Films By A Simplified Perfume Atomizer Technique, V. Sivaranjani, P. Philominathan
International Journal of Thin Film Science and Technology
Ti doped indium oxide thin films (I n2 O3 :Ti) were prepared at different temperatures by a simplified spray pyrolysis technique using perfume atomizer technique. The effect of substrate temperature on structural, electrical, photoluminesence and optical properties of these films have been analyzed and reported here. The XRD analysis revealed that the films possess polycrystalline with cubic bixbyite structure and the preferred orientation being in (2 2 2) direction. The grain size of the films varied from 31 nm to 55 nm with the increase of substrate temperature from 300o C to 400o C, thereafter it decreased with further increase …
Synthesis And Study Of Annealing Effect On Electrical Properties Of Cds Doped Zn Thin Films, Saad F. Oboudi, Ghuson H. Mohamed, Mohammed K. Khalaf Kadhim A. Adem
Synthesis And Study Of Annealing Effect On Electrical Properties Of Cds Doped Zn Thin Films, Saad F. Oboudi, Ghuson H. Mohamed, Mohammed K. Khalaf Kadhim A. Adem
International Journal of Thin Film Science and Technology
CdS doped Zn thin films have been prepared by thermal evaporation technique on glass substrate at room temperature under high vacuum of 10-5 mbar. These films have been annealed at different annealing temperatures (373,423,473 and 523) K. X-ray diffraction studies show that the structure is nearly crystalline with preferential orientation along the (111) direction of the cubic structure type. Results showed that the D.C. conductivity increases with increasing of temperature while it decreases with increasing of annealing temperatures. The activation energies increased with increasing of annealing temperatures. Hall measurements showed that all doped films are n-type. The charge carriers concentration …
Influence Of Sulphur On Structural And Electrical Properties Of Pbsxse1-X Films, Eman M. Nasir, N.K.Abas, S.J.Alatya
Influence Of Sulphur On Structural And Electrical Properties Of Pbsxse1-X Films, Eman M. Nasir, N.K.Abas, S.J.Alatya
International Journal of Thin Film Science and Technology
PbSxSe1-x alloys with different S content (0,0.1,0.15,0.3,0.4,1) have been successfully prepared by evacuated quartz tube under vacuum pressure (10-2Toor). PbSxSe1-x thin films have been prepared by thermal evaporation technique on glass substrate at room temperature (RT) under vacuum pressure 10-5mbar at deposition rate 5nm/sec .The effect of S content on some of the electrical properties has been studied.The structure of (PbSxSe1-x ) alloys and films have been studied by X-ray diffraction technique. X-ray diffraction study shows that the Structure is polycrystalline with cubic Structure with preferential orientation in the (200) direction for films. From D.C measurements all films have shown …
Influence Of Thickness And Annealing Temperature On Structural And Electrical Properties Of Te/Si Heterojunction, Mahdi Hasan Suhail
Influence Of Thickness And Annealing Temperature On Structural And Electrical Properties Of Te/Si Heterojunction, Mahdi Hasan Suhail
International Journal of Thin Film Science and Technology
Abstract Heterojunctions are fabricated by depositing tellurium films on n-type single (n-Si) wafers by the method of vacuum evaporation.Te thin films were prepared on glass substrate to study the X-ray diffraction.The X-Ray Diffraction and measurement of the electrical properties of the Te films at room temperature with rate of deposition equal to 80 nm/sec for different thicknesses (400-800) nm and different annealing temperatures (373and 423) K were also studies . The A.C conductivity a.c() of Te films with different thicknesses and annealing temperatures has been investigated as a function of frequency and temperatures. The type of charge carriers, carrier concentration …