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Competitive Learning Techniques For Color Image Segmentation, Aaron Mavrinac, Jonathan Wu, Xiang Chen, Kemal Tepe
Competitive Learning Techniques For Color Image Segmentation, Aaron Mavrinac, Jonathan Wu, Xiang Chen, Kemal Tepe
Electrical and Computer Engineering Publications
A method for color image segmentation using a competitive learning clustering scheme is examined, and some basic improvements are made. Two important aspects of the color image segmentation problem, namely color space selection and over segmentation, are discussed in the context of the algorithm, with comments about suitability and effectiveness of choices for various applications. A variety of settings are tested and compared to highlight performance.
Epitaxial Lateral Overgrowth Of (112¯2) Semipolar Gan On (11¯00) M-Plane Sapphire By Metalorganic Chemical Vapor Deposition, X. Ni, Ü. Özgür, A. A. Baski, Hadis Morkoç, Lin Zhou, David J. Smith, C. A. Tran
Epitaxial Lateral Overgrowth Of (112¯2) Semipolar Gan On (11¯00) M-Plane Sapphire By Metalorganic Chemical Vapor Deposition, X. Ni, Ü. Özgür, A. A. Baski, Hadis Morkoç, Lin Zhou, David J. Smith, C. A. Tran
Electrical and Computer Engineering Publications
The authors report the growth of semipolar (112¯2)GaNfilms on nominally on-axis (101¯0) m-plane sapphire substrates using metal organic chemical vapor deposition. High-resolution x-ray diffraction(XRD) results indicate a preferred (112¯2)GaN orientation. Moreover, epitaxial lateral overgrowth (ELO) of GaN was carried out on the (112¯2) oriented GaN templates. When the ELO stripes were aligned along [112¯0]sapphire, the Ga-polar wings were inclined by 32° with respect to the substrate plane with smooth extended nonpolar a-plane GaN surfaces and polar c-plane GaNgrowth fronts. When compared with the template, the on-axis and off-axis XRD rocking curves indicated significant improvement in the crystalline quality by ELO …
Nanostructuring Induced Enhancement Of Radiation Hardness In Gan Epilayers, V. V. Ursaki, I. M. Tiginyanu, O. Volcuic, V. Popa, V. A. Skuratov, Hadis Morkoç
Nanostructuring Induced Enhancement Of Radiation Hardness In Gan Epilayers, V. V. Ursaki, I. M. Tiginyanu, O. Volcuic, V. Popa, V. A. Skuratov, Hadis Morkoç
Electrical and Computer Engineering Publications
The radiation hardness of as-grown and electrochemically nanostructured GaN epilayers against heavy ion irradiation was studied by means of photoluminescence(PL) and resonant Raman scattering (RRS) spectroscopy. A nanostructuring induced enhancement of the GaN radiation hardness by more than one order of magnitude was derived from the PL and RRS analyses. These findings show that electrochemical nanostructuring of GaN layers is a potentially attractive technology for the development of radiation hard devices.
Magnetic Anisotropy And Crystalline Texture In Bao(Fe2o3)(6) Thin Films Deposited On Gan/Al2o3, P. R. Ohodnicki, K. Y. Goh, Y. Hanlumyuang, K. Ramos, M. E. Mchenry, Z. Cai, K. Ziemer, H. Morkoc, N. Biyikli, Z. Chen, C. Vittoria, V. G. Harris
Magnetic Anisotropy And Crystalline Texture In Bao(Fe2o3)(6) Thin Films Deposited On Gan/Al2o3, P. R. Ohodnicki, K. Y. Goh, Y. Hanlumyuang, K. Ramos, M. E. Mchenry, Z. Cai, K. Ziemer, H. Morkoc, N. Biyikli, Z. Chen, C. Vittoria, V. G. Harris
Electrical and Computer Engineering Publications
BaO(Fe2O3)6 (BaM) thin films were deposited by pulsed laser deposition on GaN∕Al2O3 substrates. A pole figure obtained from the (006) reflection indicated that ∼81% of the film volume had the c axis tilted less than 5° from the film normal. A low anisotropy field was inferred from vector coil vibrating sample magnetometer (VVSM) measurements. The reduction in Hafrom literature values and a two-step switching of the easy axis magnetization is postulated to result from interdiffusion and misalignment effects. To alleviate interdiffusion and to improve the c-axis alignment, experiments were repeated with lower deposition temperatures, thinner films, and MgO buffer layers. …
Magnetotransport Properties Of Alxga1-Xn/Aln/Gan Heterostructures Grown On Epitaxial Lateral Overgrown Gan Templates, N. Biyikli, X. Ni, Y. Fu, J. Xie, H. Morkoç, H. Cheng, Ç. Kurdak, I. Vurgaftman, J. R. Meyer
Magnetotransport Properties Of Alxga1-Xn/Aln/Gan Heterostructures Grown On Epitaxial Lateral Overgrown Gan Templates, N. Biyikli, X. Ni, Y. Fu, J. Xie, H. Morkoç, H. Cheng, Ç. Kurdak, I. Vurgaftman, J. R. Meyer
Electrical and Computer Engineering Publications
We studied the low-temperature magnetotransport properties of AlxGa1−xN∕AlN∕GaN heterostructures with a two-dimensional electron gas(2DEG). Structures with different Al compositions were grown by metal-organic vapor-phase epitaxy on three types of templates: conventional undoped GaN, in situ epitaxial lateral overgrown GaN using a SiNx nanomask layer, and ex situe pitaxial lateral overgrown GaN (ELO-GaN) using a stripe-patterned SiO2 mask. All of the samples display Shubnikov–de Haas (SdH) oscillations that confirm the existence of 2DEGs. Field-dependent magnetoresistance and Hall measurements further indicate that the overgrown heterostructures have a parallel conducting layer in addition to the 2DEG. To characterize the parallel channel, we …