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Articles 1 - 5 of 5
Full-Text Articles in Engineering Physics
Unfolding The High Energy Electron Flux From Crres Fluxmeter Measurements, Brian D. Mckellar
Unfolding The High Energy Electron Flux From Crres Fluxmeter Measurements, Brian D. Mckellar
Theses and Dissertations
The Combined Release and Radiation Effects Satellite (CRRES) was launched on 25 July 1990 to collect measurements in the earth's radiation belts. One instrument, the High Energy Electron Fluxmeter (HEEF), measured the flux of electrons in 10 channels with energies between 1 MeV and 10 MeV. The channel sensitivities, Ri(E), have been calibrated and partially re-calibrated. We explore the errors introduced in unfolding the electron flux spectrum from the channel measurements and the propagation and growth of calibration and measurement errors. Using numerical experimentation, we fold the responses with known spectra to obtain simulated measurements, add random measurement and calibration …
Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski
Luminescence Study Of Ion-Implanted Gallium Nitride, Eric Silkowski
Theses and Dissertations
Luminescence and absorption measurements were used to demonstrate the efficacy of ion implantation for introducing various classes of dopants into GaN. A wide range of implantation and annealing studies were performed with several dopant species (Ar, Zn, C, O, Si, Be, Mg, Nd, Er). Room temperature ion implantation was performed on MOCVD- and MBE-grown GaN samples at energies between 100 and 1150 keV with doses ranging from 1 x 1013 to 1 x 1015/cm-2. Conventional furnace annealing in flowing NH3 or N2 gas resulted in good implantation damage recovery at an annealing temperature …
Построение Редуцированного Физического Гамильтониана Для Сферически-Симметричной Гравитации, Николай Заркевич
Построение Редуцированного Физического Гамильтониана Для Сферически-Симметричной Гравитации, Николай Заркевич
Nikolai A. Zarkevich
No abstract provided.
Electronic Origins Of Ordering In Multicomponent Metallic Alloys: Application To The Cu-Ni-Zn System, J. D. Althoff, Duane D. Johnson, F. J. Pinski, J. B. Staunton
Electronic Origins Of Ordering In Multicomponent Metallic Alloys: Application To The Cu-Ni-Zn System, J. D. Althoff, Duane D. Johnson, F. J. Pinski, J. B. Staunton
Duane D. Johnson
We investigate the ordering tendencies of the fcc Cu-Ni-Zn system using a recently developed first-principles, density-functional-based theory of atomic short-range order (ASRO) in disordered substitutional alloys of an arbitrary number of components. We find for the binary alloys a variety of effects which should lead to competition in the ternaries: commensurate ordering (Ni-Zn), long-period ordering (Cu-rich Cu-Zn), and clustering (Cu-Ni), in agreement with experiment. We calculate the ASRO of various disordered ternary alloys (as described by the Warren-Cowley pair-correlation function) and discuss its relationship to the electronic structure of the binary and ternary disordered alloys. We find [100]-type ASRO over …
An Electroabsorption Study Of Porous Silicon, Melanie Fewings
An Electroabsorption Study Of Porous Silicon, Melanie Fewings
WWU Honors College Senior Projects
Bulk silicon is an indirect band gap material. When carriers are injected into bulk silicon, electron-hole recombination takes place thermally via phonon exchange, and not by emission of photons. Porous silicon, on the other hand, is a fairly efficient emitter of light in the visible region. Much research is currently under way to find out what makes porous silicon able to emit light. One main theory suggests that the energy bands of bulk silicon may be "squeezed" by being quantum confined, and porous silicon is just an array of quantum silicon wires. Another possibility is that defects in the huge …