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Full-Text Articles in Condensed Matter Physics

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers May 2023

Fabrication Of Black Phosphorus Terahertz Photoconductive Antennas, Nathan Tanner Sawyers

Physics Undergraduate Honors Theses

Terahertz (THz) photoconductive antennas (PCAs) using 40nm thin-film flakes of black phosphorus (BP) and hexagonal boron nitride (hBN) have been shown computationally to be capable of THz emission comparable to those based on GaAs [2]. In this paper, I briefly describe the scientific and practical interest in THz emissions and explain what warrants research into black phosphorus as a photoconductive semiconductor in THz devices. Furthermore, I outline the basic principle of how these antennas work and mention alternative designs produced by other researchers in the past. Finally, I summarize the fabrication process of these antennas, as well as the measurements …


Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes Nov 2022

Raman Scattering Measurements And Analyses Of Gan Thin Films Grown On Zno Substrates By Metalorganic Chemical Vapor Deposition, Zane Mcdaniel, Zhe Chuan Feng, Kevin Stokes

Symposium of Student Scholars

Metalorganic chemical vapor deposition (MOCVD) is a popularly used method of growing thin films of GaN on ZnO (GZ) substrates, which pair well due to their structural and characteristic similarities. In this research, optical characterization of the surface quality of GZ sample films is measured by analyzing Raman scattering (RS) using a Renishaw inVia spectrometer fitted with a 532nm laser. Samples were grown in an improved double injection block rotating disc reactor. Multiple samples' spectra show broad peaks that correspond with the E2 (high) and A1 (LO) branches of GaN, and nicely fitted curves are observed for the characteristic E2 …


Frontiers In The Self-Assembly Of Charged Macromolecules, Khatcher O. Margossian Oct 2022

Frontiers In The Self-Assembly Of Charged Macromolecules, Khatcher O. Margossian

Doctoral Dissertations

The self-assembly of charged macromolecules forms the basis of all life on earth. From the synthesis and replication of nucleic acids, to the association of DNA to chromatin, to the targeting of RNA to various cellular compartments, to the astonishingly consistent folding of proteins, all life depends on the physics of the organization and dynamics of charged polymers. In this dissertation, I address several of the newest challenges in the assembly of these types of materials. First, I describe the exciting new physics of the complexation between polyzwitterions and polyelectrolytes. These materials open new questions and possibilities within the context …


Asymmetric Control Of Light At The Nanoscale, Christos Argyropoulos Jul 2022

Asymmetric Control Of Light At The Nanoscale, Christos Argyropoulos

Department of Electrical and Computer Engineering: Faculty Publications

Breaking reciprocity at the nanoscale can produce directional formation of images due to the asymmetric nonlinear optical response of subwavelength anisotropic resonators. The self-induced passive non-reciprocity has advantages compared to magnet or time modulation approaches and may impact both classical and quantum photonics.


Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert Jan 2022

Infrared Dielectric Functions And Brillouin Zone Center Phonons Of Α-Ga2O3 Compared To Α-Al2O3, Megan Stokey, Rafal Korlacki, Matthew J. Hilfiker, Sean Knight, Steffen Richter, Vanya Darakchieva, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Yuichi Oshima, Kamruzzaman Khan, Elaheh Ahmadi, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

We determine the anisotropic dielectric functions of rhombohedral α-Ga2O3 by far-infrared and infrared generalized spectroscopic ellipsometry and derive all transverse optical and longitudinal optical phonon mode frequencies and broadening parameters. We also determine the high-frequency and static dielectric constants. We perform density functional theory computations and determine the phonon dispersion for all branches in the Brillouin zone, and we derive all phonon mode parameters at the Brillouin zone center including Raman-active, infrared-active, and silent modes. Excellent agreement is obtained between our experimental and computation results as well as among all previously reported partial information from experiment …


Interplay Between The Lattice And Spin Degrees Of Freedom In Magnetoelectric And Magnetic Materials, Temuujin Bayaraa Dec 2021

Interplay Between The Lattice And Spin Degrees Of Freedom In Magnetoelectric And Magnetic Materials, Temuujin Bayaraa

Graduate Theses and Dissertations

This dissertation contains several investigations on the cross-coupling between structural and spin degrees of freedom in multiferroic and ferrimagnetic compounds by means of first-principles calculations and ab-initio-based Monte-Carlo simulations. We start with the reviews of magnetoelectricity, ferrimagnetism, strain engineering, followed by a brief introduction to first-principles computational methods, magnetic effective Hamiltonians, and other techniques that are utilized here. The results section of the dissertation can be divided into two parts. The first half focuses on magnetoelectric effects arising from different sources, while the second half is about the ferrimagnetic nature of materials. In the first part, we examine the epitaxial …


High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert Sep 2021

High-Frequency And Below Bandgap Anisotropic Dielectric Constants In Α-(AlXGa1-X)2O3 (0≤X≤1), Matthew Hilfiker, Ufuk Kilic, Megan Stokey, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Rafal Korlacki, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

A Mueller matrix spectroscopic ellipsometry approach was used to investigate the anisotropic dielectric constants of corundum α-(AlxGa1-x)2O3 thin films in their below bandgap spectral regions. The sample set was epitaxially grown using plasma-assisted molecular beam epitaxy on m-plane sapphire. The spectroscopic ellipsometry measurements were performed at multiple azimuthal angles to resolve the uniaxial dielectric properties. A Cauchy dispersion model was applied, and high-frequency dielectric constants are determined for polarization perpendicular (ε∞,⟂) and parallel (ε∞,∥) to the thin film c-axis. The optical birefringence is negative throughout the …


A Study Of Magnetism And Possible Mixed-State Superconductivity In Phosphorus-Doped Graphene, Julian E. Gil Pinzon Jun 2021

A Study Of Magnetism And Possible Mixed-State Superconductivity In Phosphorus-Doped Graphene, Julian E. Gil Pinzon

FIU Electronic Theses and Dissertations

Evidence of superconducting vortices, and consequently mixed-state superconductivity, has been observed in phosphorus-doped graphene at temperatures as high as 260 K. The evidence includes transport measurements in the form of resistance versus temperature curves, and magnetic measurements in the form of susceptibility and magnetic Nernst effect measurements. The drops in resistance, periodic steps in resistance, the appearance of Nernst peaks and hysteresis all point to phosphorus-doped graphene having a broad resistive region due to flux flow as well as a Berezinskii-Kosterlitz-Thouless (BKT) transition at lower temperatures.

The observation of irreversible behavior in phosphorus-doped graphene under the influence of a thermal …


Optical Phonon Modes, Static And High-Frequency Dielectric Constants, And Effective Electron Mass Parameter In Cubic In2O3, Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hongping Zhao, Vanya Darakchieva, Mathias Schubert Jun 2021

Optical Phonon Modes, Static And High-Frequency Dielectric Constants, And Effective Electron Mass Parameter In Cubic In2O3, Megan Stokey, Rafal Korlacki, Sean Knight, Alexander Ruder, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Yuxuan Zhang, Hongping Zhao, Vanya Darakchieva, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic ellipsometry, as well as first principles calculations. Dielectric function spectra measured on high quality, marginally electrically conductive melt grown single bulk crystals are obtained on a wavelength-by-wavelength (also known as point-by-point) basis and by numerical reduction of a subtle free charge carrier Drude model contribution. A four-parameter semi-quantum model is applied to determine all 16 pairs of infrared-active transverse and longitudinal optical phonon modes, including the high-frequency dielectric constant, ε=4.05±0.05. The …


Zinc Gallate Spinel Dielectric Function, Band-To-Band Transitions, And Γ-Point Effective Mass Parameters, Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kilic, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, Mathias Schubert Mar 2021

Zinc Gallate Spinel Dielectric Function, Band-To-Band Transitions, And Γ-Point Effective Mass Parameters, Matthew J. Hilfiker, Megan Stokey, Rafal Korlacki, Ufuk Kilic, Zbigniew Galazka, Klaus Irmscher, Stefan Zollner, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

We determine the dielectric function of the emerging ultrawide bandgap semiconductor ZnGa2O4 from the near-infrared (0.75 eV) into the vacuum ultraviolet (8.5 eV) spectral regions using spectroscopic ellipsometry on high quality single crystal substrates. We perform density functional theory calculations and discuss the band structure and the Brillouin zone Γ-point band-to-band transition energies, their transition matrix elements, and effective band mass parameters. We find an isotropic effective mass parameter (0.24me) at the bottom of the Γ-point conduction band, which equals the lowest valence band effective mass parameter at the top of the highly anisotropic …


Plasmonic Waveguides To Enhance Quantum Electrodynamic Phenomena At The Nanoscale, Ying Li, Christos Argyropoulos Feb 2021

Plasmonic Waveguides To Enhance Quantum Electrodynamic Phenomena At The Nanoscale, Ying Li, Christos Argyropoulos

Department of Electrical and Computer Engineering: Faculty Publications

The emerging field of plasmonics can lead to enhanced light-matter interactions at extremely nanoscale regions. Plasmonic (metallic) devices promise to efficiently control both classical and quantum properties of light. Plasmonic waveguides are usually used to excite confined electromagnetic modes at the nanoscale that can strongly interact with matter. The analysis of these nanowaveguides exhibits similarities with their low frequency microwave counterparts. In this article, we review ways to study plasmonic nanostructures coupled to quantum optical emitters from a classical electromagnetic perspective. These quantum emitters are mainly used to generate single-photon quantum light that can be employed as a quantum bit …


Anisotropic Dielectric Functions, Band-To-Band Transitions, And Critical Points In Α-Ga2O3, Matthew J. Hilfiker, Rafal Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert Feb 2021

Anisotropic Dielectric Functions, Band-To-Band Transitions, And Critical Points In Α-Ga2O3, Matthew J. Hilfiker, Rafal Korlacki, Riena Jinno, Yongjin Cho, Huili Grace Xing, Debdeep Jena, Ufuk Kilic, Megan Stokey, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

We use a combined generalized spectroscopic ellipsometry and density functional theory approach to determine and analyze the anisotropic dielectric functions of an α-Ga2O3 thin film. The sample is grown epitaxially by plasma-assisted molecular beam epitaxy on m-plane sapphire. Generalized spectroscopic ellipsometry data from multiple sample azimuths in the spectral range from 0.73 eV to 8.75 eV are simultaneously analyzed. Density functional theory is used to calculate the valence and conduction band structure. We identify, for the indirect-bandgap material, two direct band-to-band transitions with M0-type van Hove singularities for polarization perpendicular to the c axis, …


Strain And Stress Relationships For Optical Phonon Modes In Monoclinic Crystals With Β-Ga2O3 As An Example, Rafal Korlacki, Megan Stokey, Alyssa Lynn Mock, Sean Knight, Alexis Papamichail, Vanya Darakchieva, Mathias Schubert Nov 2020

Strain And Stress Relationships For Optical Phonon Modes In Monoclinic Crystals With Β-Ga2O3 As An Example, Rafal Korlacki, Megan Stokey, Alyssa Lynn Mock, Sean Knight, Alexis Papamichail, Vanya Darakchieva, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

Strain-stress relationships for physical properties are of interest for heteroepitaxial material systems, where strain and stress are inherent due to thermal expansion and lattice mismatch. We report linear perturbation theory strain and stress relationships for optical phonon modes in monoclinic crystals for strain and stress situations which maintain the monoclinic symmetry of the crystal. By using symmetry group analysis and phonon frequencies obtained under various deformation scenarios from density-functional perturbation theory calculations on β-Ga2O3, we obtain four strain and four stress potential parameters for each phonon mode. We demonstrate that these parameters are sufficient to …


Brillouin Zone Center Phonon Modes In Znga2O4, Megan Stokey, Rafal Korlacki, Sean Knight, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, Mathias Schubert Aug 2020

Brillouin Zone Center Phonon Modes In Znga2O4, Megan Stokey, Rafal Korlacki, Sean Knight, Matthew J. Hilfiker, Zbigniew Galazka, Klaus Irmscher, Vanya Darakchieva, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

Infrared-active lattice mode properties of melt-grown high-quality single bulk crystals of ZnGa2O4 are investigated by combined spectroscopic ellipsometry and density functional theory computation analysis. The normal spinel structure crystals are measured by spectroscopic ellipsometry at room temperature in the range of 100 cm–1–1200 cm–1. The complex-valued dielectric function is determined from a wavenumber-by-wavenumber approach, which is then analyzed by the four-parameter semi-quantum model dielectric function approach augmented by impurity mode contributions. We determine four infrared-active transverse and longitudinal optical mode pairs, five localized impurity mode pairs, and the high frequency dielectric constant. All …


Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight Aug 2020

Free Charge Carrier Properties In Two-Dimensional Materials And Monoclinic Oxides Studied By Optical Hall Effect, Sean Knight

Department of Electrical and Computer Engineering: Dissertations, Theses, and Student Research

In this dissertation, optical Hall effect (OHE) measurements are used to determine the free charge carrier properties of important two-dimensional materials and monoclinic oxides. Two-dimensional material systems have proven useful in high-frequency electronic devices due to their unique properties, such as high mobility, which arise from their two-dimensional nature. Monoclinic oxides exhibit many desirable characteristics, for example low-crystal symmetry which could lead to anisotropic carrier properties. Here, single-crystal monoclinic gallium oxide, an AlInN/GaN-based high-electron-mobility transistor (HEMT) structure, and epitaxial graphene are studied as examples. To characterize these material systems, the OHE measurement technique is employed. The OHE is a physical …


Infrared-Active Phonon Modes In Single-Crystal Thorium Dioxide And Uranium Dioxide, Sean Knight, Rafal Korlacki, Christina Dugan, James C. Petrosky, Alyssa Lynn Mock, Peter A. Dowben, J. Matthew Mann, Martin M. Kimani, Mathias Schubert Mar 2020

Infrared-Active Phonon Modes In Single-Crystal Thorium Dioxide And Uranium Dioxide, Sean Knight, Rafal Korlacki, Christina Dugan, James C. Petrosky, Alyssa Lynn Mock, Peter A. Dowben, J. Matthew Mann, Martin M. Kimani, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

The infrared-active phonon modes, in single-crystal samples of thorium dioxide (ThO2) and uranium dioxide (UO2), were investigated using spectroscopic ellipsometry and compared with density functional theory. Both ThO2 and UO2 are found to have one infrared-active phonon mode pair [consisting of one transverse optic (TO) and one associated longitudinal optic (LO) mode], which is responsible for the dominant features in the ellipsometric data. At room temperature, our results for the mode pair’s resonant frequencies and broadening parameters are comparable with previous reflectance spectroscopy characterizations and density functional theory predictions. For ThO2, our …


Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya Jan 2020

Electric Field Control Of Fixed Magnetic Skyrmions For Energy Efficient Nanomagnetic Memory, Dhritiman Bhattacharya

Theses and Dissertations

To meet the ever-growing demand of faster and smaller computers, increasing number of transistors are needed in the same chip area. Unfortunately, Silicon based transistors have almost reached their miniaturization limits mainly due to excessive heat generation. Nanomagnetic devices are one of the most promising alternatives of CMOS. In nanomagnetic devices, electron spin, instead of charge, is the information carrier. Hence, these devices are non-volatile: information can be stored in these devices without needing any external power which could enable computing architectures beyond traditional von-Neumann computing. Additionally, these devices are also expected to be more energy efficient than CMOS devices …


Superconducting Phase Transition In Inhomogeneous Chains Of Superconducting Islands, Eduard Ilin, Irina Burkova, Xiangyu Song, Michael Pak, Dmitri S. Golubev, Alexey Bezryadin Jan 2020

Superconducting Phase Transition In Inhomogeneous Chains Of Superconducting Islands, Eduard Ilin, Irina Burkova, Xiangyu Song, Michael Pak, Dmitri S. Golubev, Alexey Bezryadin

Faculty Publications

We study one-dimensional chains of superconducting islands with a particular emphasis on the regime in which every second island is switched into its normal state, thus forming a superconductor-insulator-normal metal (S-I-N) repetition pattern. As is known since Giaever tunneling experiments, tunneling charge transport between a superconductor and a normal metal becomes exponentially suppressed, and zero-bias resistance diverges, as the temperature is reduced and the energy gap of the superconductor grows larger than the thermal energy. Here we demonstrate that this physical phenomenon strongly impacts transport properties of inhomogeneous superconductors made of weakly coupled islands with fluctuating values of the critical …


Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves Jan 2020

Synthesis Of Graphene Using Plasma Etching And Atmospheric Pressure Annealing: Process And Sensor Development, Andrew Robert Graves

Graduate Theses, Dissertations, and Problem Reports

Having been theorized in 1947, it was not until 2004 that graphene was first isolated. In the years since its isolation, graphene has been the subject of intense, world-wide study due to its incredibly diverse array of useful properties. Even though many billions of dollars have been spent on its development, graphene has yet to break out of the laboratory and penetrate mainstream industrial applications markets. This is because graphene faces a ‘grand challenge.’ Simply put, there is currently no method of manufacturing high-quality graphene on the industrial scale. This grand challenge looms particularly large for electronic applications where the …


Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert Jun 2019

Dielectric Function Tensor (1.5 Ev To 9.0 Ev), Anisotropy, And Band To Band Transitions Of Monoclinic Β-(AlXGa1–X)2O3 (X ≤ 0.21) Films, Matthew Hilfiker, Ufuk Kilic, Alyssa Mock, Vanya Darakchieva, Sean Knight, Rafal Korlacki, Akhil Mauze, Yuewei Zhang, James Speck, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

A set of monoclinic β-(AlxGa1–x)2O3 films coherently grown by plasma-assisted molecular beam epitaxy onto (010)-oriented β-Ga2O3 substrates for compositions x ≤ 0.21 is investigated by generalized spectroscopic ellipsometry at room temperature in the spectral range of 1.5 eV–9.0 eV. We present the composition dependence of the excitonic and band to band transition energy parameters using a previously described eigendielectric summation approach for β-Ga2O3 from the study by Mock et al. All energies shift to a shorter wavelength with the increasing Al content in …


Exploring The Electrical Properties Of Twisted Bilayer Graphene, William Shannon May 2019

Exploring The Electrical Properties Of Twisted Bilayer Graphene, William Shannon

Senior Theses

Two-dimensional materials exhibit properties unlike anything else seen in conventional substances. Electrons in these materials are confined to move only in the plane. In order to explore the effects of these materials, we have built apparatus and refined procedures with which to create two-dimensional structures. Two-dimensional devices have been made using exfoliated graphene and placed on gold contacts. Their topography has been observed using Atomic Force Microscopy (AFM) confirming samples with monolayer, bilayer, and twisted bilayer structure. Relative work functions of each have been measured using Kelvin Probe Force Microscopy (KPFM) showing that twisted bilayer graphene has a surface potential …


Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert Feb 2019

Electromagnon Excitation In Cupric Oxide Measured By Fabry-Pérot Enhanced Terahertz Mueller Matrix Ellipsometry, Sean Knight, Dharmalingam Prabhakaran, Christian Binek, Mathias Schubert

Christian Binek Publications

Here we present the use of Fabry-Pérot enhanced terahertz (THz) Mueller matrix ellipsometry to measure an electromagnon excitation in monoclinic cupric oxide (CuO). As a magnetically induced ferroelectric multiferroic, CuO exhibits coupling between electric and magnetic order. This gives rise to special quasiparticle excitations at THz frequencies called electromagnons. In order to measure the electromagnons in CuO, we exploit single-crystal CuO as a THz Fabry-Pérot cavity to resonantly enhance the excitation’s signature. This enhancement technique enables the complex index of refraction to be extracted. We observe a peak in the absorption coefficient near 0.705 THz and 215 K, which corresponds …


Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva Jan 2019

Phonon Order And Reststrahlen Bands Of Polar Vibrations In Crystals With Monoclinic Symmetry, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Vanya Darakchieva

Department of Electrical and Computer Engineering: Faculty Publications

In this Rapid Communication, we present the order of the phonon modes and the appearance of the reststrahlen bands for monoclinic symmetry materials with polar lattice vibrations. Phonon modes occur in associated pairs of transverse and longitudinal optical modes, and pairs either belong to inner or outer phonon modes. Inner modes are nested within outer modes. Outer modes cause polarization-dependent reststrahlen bands. Inner modes cause polarization-independent reststrahlen bands. The directional limiting frequencies within the Born-Huang approach are bound to within outer mode frequency regions not occupied by inner mode pairs. Hence, an unusual phonon mode order can occur where both …


Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva Jan 2019

Longitudinal Phonon Plasmon Mode Coupling In Β-Ga2O3, Mathias Schubert, Alyssa Mock, Rafal Korlacki, Sean Knight, Zbigniew Galazka, Günther Wagner, Virginia Wheeler, Marko Tadjer, Ken Goto, Vanya Darakchieva

Department of Electrical and Computer Engineering: Faculty Publications

In this letter, we investigate a set of n-type single crystals of monoclinic symmetry β-Ga2O3 with different free electron concentration values by generalized far infrared and infrared spectroscopic ellipsometry. In excellent agreement with our previous model prediction, we find here by experiment that longitudinal-phonon-plasmon coupled modes are polarized either within the monoclinic plane or perpendicular to the monoclinic plane. As predicted, all modes change the amplitude and frequency with the free electron concentration. The most important observation is that all longitudinal-phonon-plasmon coupled modes polarized within the monoclinic plane continuously change their direction as a function of …


Lattice Dynamics Of Orthorhombic Ndgao3, Alyssa Mock, Rafal Korlacki, Sean Knight, Megan Stokey, Alex Fritz, Vanya Darakchieva, Mathias Schubert Jan 2019

Lattice Dynamics Of Orthorhombic Ndgao3, Alyssa Mock, Rafal Korlacki, Sean Knight, Megan Stokey, Alex Fritz, Vanya Darakchieva, Mathias Schubert

Department of Electrical and Computer Engineering: Faculty Publications

A complete set of infrared-active and Raman-active lattice modes is obtained from density functional theory calculations for single-crystalline centrosymmetric orthorhombic neodymium gallate. The results for infrared-active modes are compared with an analysis of the anisotropic long-wavelength properties using generalized spectroscopic ellipsometry. The frequency-dependent dielectric function tensor and dielectric loss function tensor of orthorhombic neodymium gallium oxide are reported in the spectral range of 80–1200 cm−1. A combined eigendielectric displacement vector summation and dielectric displacement loss vector summation approach augmented by considerations of lattice anharmonicity is utilized to describe the experimentally determined tensor elements. All infrared-active transverse and longitudinal …


Limitations Of Zt As A Figure Of Merit For Nanostructured Thermoelectric Materials, Xufeng Wang, Mark Lundstrom Jan 2019

Limitations Of Zt As A Figure Of Merit For Nanostructured Thermoelectric Materials, Xufeng Wang, Mark Lundstrom

Department of Electrical and Computer Engineering Faculty Publications

Thermoelectric properties of nanocomposites are numerically studied as a function of average grain size or nanoparticle density by simulating the measurements as they would be done experimentally. In accordance with previous theoretical and experimental results, we find that the Seebeck coefficient, power factor and figure of merit, zT, can be increased by nanostructuring when energy barriers exist around the grain boundaries or embedded nanoparticles. When we simulate the performance of a thermoelectric cooler with the same material, however, we find that the maximum temperature difference is much less than expected from the given zT. This occurs because the …


Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed Jan 2019

Straintronic Nanomagnetic Devices For Non-Boolean Computing, Md Ahsanul Abeed

Theses and Dissertations

Nanomagnetic devices have been projected as an alternative to transistor-based switching devices due to their non-volatility and potentially superior energy-efficiency. The energy efficiency is enhanced by the use of straintronics which involves the application of a voltage to a piezoelectric layer to generate a strain which is ultimately transferred to an elastically coupled magnetostrictive nanomaget, causing magnetization rotation. The low energy dissipation and non-volatility characteristics make straintronic nanomagnets very attractive for both Boolean and non-Boolean computing applications. There was relatively little research on straintronic switching in devices built with real nanomagnets that invariably have defects and imperfections, or their adaptation …


Physical Electronic Properties Of Self-Assembled 2d And 3d Surface Mounted Metal-Organic Frameworks, Radwan Elzein Nov 2018

Physical Electronic Properties Of Self-Assembled 2d And 3d Surface Mounted Metal-Organic Frameworks, Radwan Elzein

USF Tampa Graduate Theses and Dissertations

Metal-organic frameworks stand at the frontiers of molecular electronic research because they combine desirable physical properties of organic and inorganic components. They are crystalline porous solids constructed by inorganic nodes coordinated to organic ligands to form 1D, 2D, or 3D structures. They possess unique characteristics such as ultrahigh surface area crystal lattices up to 10000 m2 g-1, and tunable nanoporous sizes ranging from 0.2 to 50 nm. Their unprecedented structural diversity and flexibility beyond solid state materials can lead to unique properties such as tailorable electronic and ionic conductivity which can serve as interesting platforms for a …


Genetic Algorithm Design Of Photonic Crystals For Energy-Efficient Ultrafast Laser Transmitters, Troy A. Hutchins-Delgado Nov 2018

Genetic Algorithm Design Of Photonic Crystals For Energy-Efficient Ultrafast Laser Transmitters, Troy A. Hutchins-Delgado

Shared Knowledge Conference

Photonic crystals allow light to be controlled and manipulated such that novel photonic devices can be created. We are interested in using photonic crystals to increase the energy efficiency of our semiconductor whistle-geometry ring lasers. A photonic crystal will enable us to reduce the ring size, while maintaining confinement, thereby reducing its operating power. Photonic crystals can also exhibit slow light that will increase the interaction with the material. This will increase the gain, and therefore, lower the threshold for lasing to occur. Designing a photonic crystal for a particular application can be a challenge due to its number of …


Tailoring The Asymmetric Magnetoimpedance Response In Exchange-Biased Ni - Fe Multilayers, Ufuk Kilic, Carolina Ross, Carlos Garcia Sep 2018

Tailoring The Asymmetric Magnetoimpedance Response In Exchange-Biased Ni - Fe Multilayers, Ufuk Kilic, Carolina Ross, Carlos Garcia

Ufuk Kilic

The dependence of the asymmetric magnetoimpedance (MI) response on the directions of both the magnetic field and the exchange bias is studied for an [NiFe(60nm)/IrMn(35nm)]×5 multilayer system. The antiferromagnetic (AFM) layers create an exchange bias that shifts both the hysteresis loop and the MI response of NiFe; the strength of this coupling depends on the thicknesses of both the ferromagnetic layer and the AFM layer. Tuning the exchange-bias angle and the applied-magnetic-field direction provides a practical method to control the symmetry and the magnitude of the MI response. The observed asymmetric response can …