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Articles 1 - 6 of 6
Full-Text Articles in Physics
Fabrication Of Robust Superconducting Granular Aluminium/Palladium Bilayer Microbolometers With Sub-Nanosecond Response, Thomas E. Wilson
Fabrication Of Robust Superconducting Granular Aluminium/Palladium Bilayer Microbolometers With Sub-Nanosecond Response, Thomas E. Wilson
Thomas E. Wilson
We provide a convenient recipe for fabricating reliable superconducting microbolometers as acoustic phonon detectors with sub-nanosecond response, using imagereversal optical lithography and dc-magnetron sputtering, and our recipe requires no chemical or plasma etching. Our approach solves the traditional problem for granular aluminium bolometers of unreliable (i.e., non-Ohmic) electrical contacts by sequentially sputtering the granular aluminium film and then a palladium capping layer. We use dc calibration data, the method of Danilchenko et al. [1], and direct nanosecond-pulsed photoexcitation to obtain the microbolometer’s characteristic current, thermal conductance, characteristic relaxation time, and heat capacity. We also demonstrate the use of the deconvolution …
Influence Of Composition On The Structure And Optoelectronic Properties Of Pb_Xin_{25-X}Se_{75} Thin Films, Hesham Azmi Elmeleegi, Zeinab El Sayed El Mandouh, Ahmed Abdel Moez
Influence Of Composition On The Structure And Optoelectronic Properties Of Pb_Xin_{25-X}Se_{75} Thin Films, Hesham Azmi Elmeleegi, Zeinab El Sayed El Mandouh, Ahmed Abdel Moez
Turkish Journal of Physics
Pb_xIn_{25-x}Se_{75} thin films with 2 compositions were prepared by thermal evaporation. The surface topography of these films was studied by transmission electron microscope. The optical reflectance and transmittance were studied in order to determine the optical parameters such as optical energy gap, refractive index, extinction coefficient, dielectric loss, and dielectric tangent loss for these films. A single oscillator theory equation was applied for these films in order to determine both dispersion energy and oscillating energy, and the ratio of free carrier concentration/effective mass (N/m*) was determined optically. It was found that change in the composition of these films affects strongly …
An Investigation On Silar Deposited Cu_Xs Thin Films, Aykut Astam, Yunus Akaltun, Muhammet Yildirim
An Investigation On Silar Deposited Cu_Xs Thin Films, Aykut Astam, Yunus Akaltun, Muhammet Yildirim
Turkish Journal of Physics
A copper sulfide thin film was deposited on glass substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric sulfate and sodium sulfide aqueous solutions as precursors. The structural, surface morphological, optical, and electrical properties of the as-deposited film were investigated via X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis, optical absorption, and d.c. 2-point probe methods. The film was found to be amorphous, dense, and uniform. Average atomic percentage of Cu:S in the as-deposited film was calculated as 63:37. The band gap energy of copper sulfide thin film was found to be 2.14 eV …
Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Polarization Of Bi2te3 Thin Film In A Floating-Gate Capacitor Structure, Hui Yuan, Kai Zhang, Haitao Li, Hao Zhu, John E. Bonevich, Helmut Baumgart, Curt A. Richter, Qiliang Li
Electrical & Computer Engineering Faculty Publications
Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent …
Nanoscale Thermoelectrics: A Study Of The Absolute Seebeck Coefficient Of Thin Films, Sarah J. Mason
Nanoscale Thermoelectrics: A Study Of The Absolute Seebeck Coefficient Of Thin Films, Sarah J. Mason
Electronic Theses and Dissertations
The worlds demand for energy is ever increasing. Likewise, the environmental impact of climate change due generating that energy through combustion of fossil fuels is increasingly alarming. Due to these factors new sources of renewable energies are constantly being sought out. Thermoelectric devices have the ability to generate clean, renewable, energy out of waste heat. However promising that is, their inefficiency severely inhibits applicability and practical use. The usefulness of a thermoelectric material increases with the dimensionless quantity, ZT, where, Z = S2σ/κ, and S, σ, and κ are the Seebeck coefficient and electrical and thermal …
Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart
Physical Analysis Of Vo2 Films Grown By Atomic Layer Deposition And Rf Magnetron Sputtering, Madhavi Tangirala, Kai Zhang, David Nminibapiel, Venkateswara Pallem, Christian Dussarrat, Wei Cao, Thomas N. Adam, Corbet S. Johnson, Hani E. Elsayed-Ali, Helmut Baumgart
Electrical & Computer Engineering Faculty Publications
Among the many vanadium suboxides and different stoichiometries, VO2 has received considerable attention due to its remarkable metal-insulator transition (MIT) behavior, which causes a significant reversible change in its electrical and optical properties occurring across the phase transition at 67°C. The initially amorphous VO2 thin films were fabricated by the emerging, Atomic Layer Deposition (ALD) technique with (tetrakis[ethylmethylamino]vanadium) {V(NEtMe)4} as precursor and H2O vapor as oxidation agent. For benchmarking we have also used the RF Magnetron Sputtering technique to deposit metallic vanadium thin films, which were later oxidized during furnace annealing. Post annealing of …