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Micro Thermoelectric Cooler Fabrication: Growth And Characterization Of Patterned Sb2te3 And Bi2te3 Films ., Luciana Da Silva, M. Kaviany, A. Dehennis, Jeffrey Dyck
Micro Thermoelectric Cooler Fabrication: Growth And Characterization Of Patterned Sb2te3 And Bi2te3 Films ., Luciana Da Silva, M. Kaviany, A. Dehennis, Jeffrey Dyck
Jeffrey Dyck
A column-type micro thermoelectric cooler is being fabricated using p-type Sb2Te3 and n-type Bi2Te3 films (approximately 4 μm thick). The films are grown by thermal co-evaporation and patterned on Cr/Au/Ti/Pt (hot) connectors, which are deposited onto a silicon dioxide coated wafer. The column height is limited by control of the Te deposition rate. Although a high substrate temperature during thermoelectric film deposition is desired, it has been limited by the degradation of the photoresist used for patterning. The measured Seebeck coefficient and electrical resistivity of the thermoelectric films are reported, and preliminary results show that excess tellurium increases the Seebeck …
Transport Coefficients Of Titanium-Doped Sb2te3 Crystals., P. Svanda, P. LošŤÁK, Č. Drašar, Jeffrey Dyck
Transport Coefficients Of Titanium-Doped Sb2te3 Crystals., P. Svanda, P. LošŤÁK, Č. Drašar, Jeffrey Dyck
Jeffrey Dyck
Titanium-doped single crystals (cTi = 0 to 2×1020 atoms cm-3) were prepared from the elements Sb, Ti, and Te of 5N purity by a modified Bridgman method. The obtained crystals were characterized by measurements of the temperature dependence of the electrical resistivity, Hall coefficient, Seebeck coefficient and thermal conductivity in the temperature range of 5-300 K. It was observed that with an increasing Ti content in the samples the electrical resistance, the Hall coefficient and the Seebeck coefficient increase. This means that the incorporation of Ti atoms into the Sb2Te3 crystal structure results in a decrease in the concentration of …