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Full-Text Articles in Physics
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Studies Of Initial Growth Of Gan On Inn, Alaa Alnami
Graduate Theses and Dissertations
III-nitride materials have recently attracted much attention for applications in both the microelectronics and optoelectronics. For optoelectronic devices, III-nitride materials with tunable energy band gaps can be used as the active region of devices to enhance the absorption or emission. A such material is indium nitride (InN), which along with gallium nitride (GaN) and aluminum nitride (AlN) embody the very real promise of forming the basis of a broad spectrum, a high efficiency solar cell. One of the remaining complications in incorporating InN into a solar cell design is the effects of the high temperature growth of the GaN crystal …
Fundamental Properties Of Functional Zinc Oxide Nanowires Obtained By Electrochemical Method And Their Device Applications, Athavan Nadarajah
Fundamental Properties Of Functional Zinc Oxide Nanowires Obtained By Electrochemical Method And Their Device Applications, Athavan Nadarajah
Dissertations and Theses
We report on the fundamental properties and device applications of semiconductor nanoparticles. ZnO nanowires and CdSe quantum dots were used, prepared, characterized, and assembled into novel light-emitting diodes and solar cells. ZnO nanowire films were grown electrochemically using aqueous soluble chloride-based electrolytes as precursors at temperatures below 90° C. Dopants were added to the electrolyte in the form of chloride compounds, which are AlCl3, CoCl2, CuCl2, and MnCl2. The optical, magnetic, and structural properties of undoped and transition-metal-ion doped ZnO nanowires were explored. Our results indicate that the as-grown nanowire structures have …
Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff
Thermodynamic Limit To Photonic-Plasmonic Light-Trapping In Thin Films On Metals, Eric A. Schiff
Physics - All Scholarship
We calculate the maximum optical absorptance enhancements in thin semiconductor films on metals due to structures that diffuse light and couple it to surface plasmon polaritons. The calculations can be used to estimate plasmonic effects on light-trapping in solar cells. The calculations are based on the statistical distribution of energy in the electromagnetic modes of the structure, which include surface plasmon polariton modes at the metal interface as well as the trapped waveguide modes in the film. The enhancement has the form 4n2+nλ/h (n – film refractive index, λ – optical wavelength, h …