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Electron Energy Dependent Charging Effects Of Multilayered Dielectric Materials, Gregory Wilson, John R. Dennison, Amberly Evans, Justin Dekany Jan 2012

Electron Energy Dependent Charging Effects Of Multilayered Dielectric Materials, Gregory Wilson, John R. Dennison, Amberly Evans, Justin Dekany

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Measurements of the charge distribution in electron-bombarded, thin-film, multilayer dielectric samples showed that charging of multilayered materials evolves with time and is highly dependent on incident energy; this is driven by electron penetration depth, electron emission and material conductivity. Based on the net surface potential’s dependence on beam current, electron range, electron emission and conductivity, measurements of the surface potential, displacement current and beam energy allow the charge distribution to be inferred. To take these measurements, a thin-film disordered SiO2 structure with a conductive middle layer was charged using 200 eV and 5 keV electron beams with regular 15 s …


Approximation Of Range In Materials As A Function Of Incident Electron Energy, Gregory Wilson, John R. Dennison Jan 2010

Approximation Of Range In Materials As A Function Of Incident Electron Energy, Gregory Wilson, John R. Dennison

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A simple composite analytic expression has been developed to approximate the electron range in materials. The expression is applicable over more than six orders of magnitude in energy (10 MeV) and range (10-9 m to 10-2 m), with uncertainty of ≤20% for most conducting, semiconducting and insulating materials. This is accomplished by fitting data from two standard NIST databases [ESTAR for the higher energy range and the electron IMFP (inelastic mean free path) for the lower energies]. In turn, these data have been fit with well-established semi-empirical models for range and IMFP that are related to standard materials properties (e.g., …