Physics Commons^™

Novel Magnetic And Optical Properties Of Sn1−XZnXO2 Nanoparticles, Nevil A. Franco, Kongara M. Reddy, Josh Eixenberger, Dmitri A. Tenne, Charles B. Hanna, Alex Punnoose

Physics Faculty Publications and Presentations

In this work, we report on the effects of doping SnO₂ nanoparticles with Zn²⁺ ions. A series of ∼2–3 nm sized Sn_1−x Zn_xO₂ crystallite samples with 0 ≤ x ≤ 0.18 were synthesized using a forced hydrolysis method. Increasing dopant concentration caused systematic changes in the crystallite size, oxidation state of Sn, visible emission, and band gap of SnO₂ nanoparticles. X-ray Diffraction studies confirmed the SnO₂ phase purity and the absence of any impurity phases. Magnetic measurements at room temperature showed a weak ferromagnetic behavior characterized by an open hysteresis loop. Their …

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Optical Down-Conversion In Doped Znse:Tb3+ Nanocrystals, Sandip Das, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Investigation Of Cdznte Crystal Defects Using Scanning Probe Microscopy, Goutam Koley, J. Liu, K. C. Mandal

Krishna C. Mandal

No abstract provided.

Band Gap Engineering Via Doping: A Predictive Approach, Antonis N. Andriotis, Madhu Menon

Center for Computational Sciences Faculty Publications

We employ an extension of Harrison's theory at the tight binding level of approximation to develop a predictive approach for band gap engineering involving isovalent doping of wide band gap semiconductors. Our results indicate that reasonably accurate predictions can be achieved at qualitative as well as quantitative levels. The predictive results were checked against ab initio ones obtained at the level of DFT/SGGA + U approximation. The minor disagreements between predicted and ab initio results can be attributed to the electronic processes not incorporated in Harrison's theory. These include processes such as the conduction band anticrossing [Shan et al., …

Applications Of High Throughput (Combinatorial) Methodologies To Electronic, Magnetic, Optical, And Energy-Related Materials, Martin L. Green, Ichiro Takeuchi, Jason R. Hattrick-Simpers

Jason R. Hattrick-Simpers

High throughput (combinatorial) materials science methodology is a relatively new research paradigm that offers the promise of rapid and efficient materials screening, optimization, and discovery. The paradigm started in the pharmaceutical industry but was rapidly adopted to accelerate materials research in a wide variety of areas. High throughput experiments are characterized by synthesis of a “library” sample that contains the materials variation of interest (typically composition), and rapid and localized measurement schemes that result in massive data sets. Because the data are collected at the same time on the same “library” sample, they can be highly uniform with respect to …

Surface Science Studies Of Graphene Interfaces, Arjun Dahal

USF Tampa Graduate Theses and Dissertations

Interfaces between graphene and dissimilar materials are needed for making devices, but those interfaces also modify the graphene properties due to charge transfer and/or symmetry breaking. In this dissertation we investigate the technology of preparing graphene on different substrates and how the substrate influences the electronic properties of graphene.

Synthesizing large area graphene on late transition metals by chemical vapor deposition is a promising approach for many applications of graphene. Among the transition metals, nickel has advantages because the good lattice match and strong interaction between graphene/Ni(111) enables the synthesis of a single domain of graphene on Ni(111). However, the …

On The Capacitance Of Crystalline Silicon Solar Cells In Steady State, Fabe Idrissa Barro, Moustapha Sane, Bernard Zouma

Turkish Journal of Physics

In this work, an analytical approach is presented for modeling the capacitance of crystalline silicon solar cells. Based on a one-dimensional modeling of the cell, the excess minority carrier density, the photovoltage, and the capacitance are calculated. The motivation of this work are two-fold: to show base doping density and illumination effects on the capacitance of silicon solar cells, and to propose a determination technique for both dark capacitance and base doping density from C-V characteristics.

Investigation Of Optical And Electronic Properties Of Au Decorated Mos2, Udai Bhanu

Electronic Theses and Dissertations

Achieving tunability of two dimensional (2D) transition metal dichalcogenides (TMDs) functions calls for the introduction of hybrid 2D materials by means of localized interactions with zero dimensional (0D) materials. A metal-semiconductor interface, as in gold (Au) - molybdenum disulfide (MoS2), is of great interest from the standpoint of fundamental science as it constitutes an outstanding platform to investigate optical and electronic properties due to charge transfer. The applied aspects of such systems introduce new options for electronics, photovoltaics, detectors, catalysis, and biosensing. Here in this dissertation, we study the charge transfer interaction between Au nanoparticals and MoS2 flakes and its …