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Photoluminescence Study Of Gallium Arsenide, Aluminum Gallium Arsenide, And Gallium Antimonide Thin Films Grown By Metalorganic Chemical Vapor Deposition, John Mark Koons

Theses

The photoluminescence produced by four MOCVD grown epitaxial thin film samples was studied to give insight into sample quality. The four samples under this study were GaAs on a GaAs substrate, Al_.25Ga_.75As on a GaAs substrate, Al_.30Ga_.7OAs on a GaAs substrate, and GaSb on a GaSb substrate. Excitation was achieved through the use of the 514.0 nm line of an argon ion laser, and sample cooling was attained by use of a cryostat cooler using helium gas to attain a low temperature limit of 10°K. The GaAs and Al_.30Ga_{.7O …}