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Electron And Hole Dynamics Of Inas∕Gaasinas∕Gaas Quantum Dot Semiconductor Optical Amplifiers, I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning Aug 2007

Electron And Hole Dynamics Of Inas∕Gaasinas∕Gaas Quantum Dot Semiconductor Optical Amplifiers, I. O'Driscoll, T. Piwonski, C. F. Schleussner, J. Houlihan, G. Huyet, R. J. Manning

Physical Sciences Articles

Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers.


Carrier Capture Dynamics Of Inas/Gaas Quantum Dots, T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, A. V. Uskov Mar 2007

Carrier Capture Dynamics Of Inas/Gaas Quantum Dots, T. Piwonski, I. O'Driscoll, J. Houlihan, G. Huyet, R. J. Manning, A. V. Uskov

Physical Sciences Articles

Carrier dynamics of a 1.3μm InAs∕GaAs quantum dot amplifier is studied using heterodyne pump-probe spectroscopy. Measurements of the recovery times versus injection current reveal a power law behavior predicted by a quantum dot rate equation model. These results indicate that Auger processes dominate the carrier dynamics.