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Articles 1 - 5 of 5
Full-Text Articles in Physics
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Physics Faculty Research
Progress is described in experiments to generate coherent terahertz acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation. Future experiments are proposed that would use the superlattice as a transducer in a terahertz cryogenic acoustic reflection microscope with sub-nanometer resolution.
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Progress Towards Terahertz Acoustic Phonon Generation In Doping Superlattices, Thomas E. Wilson
Physics Faculty Research
Progress is described in experiments to generate coherent terahertz acoustic phonons in silicon doping superlattices by the resonant absorption of nanosecond-pulsed far-infrared laser radiation. Future experiments are proposed that would use the superlattice as a transducer in a terahertz cryogenic acoustic reflection microscope with sub-nanometer resolution.
Stm Studies Of Oxygen Etching Of Silicon Surfaces, Mary L. Willis
Stm Studies Of Oxygen Etching Of Silicon Surfaces, Mary L. Willis
Theses and Dissertations
This study uses atomic force microscopy (AFM) to investigate the oxygen etching behavior of the following silicon surface orientations: (001), (111), (113), (5 5 12) and (112). Most etching was performed at sample temperatures between 650 °C and 800 °C, at pressures of 3.3×10-7 and 1.5×10-7 Torr, and at an exposure of 200 L. Surface orientation strongly influences the morphology resulting from extended etching. The surface orientations that are stable against etching and remain flat include Si(001), Si(111), and Si(113). Such surfaces also include island structures, which result from etching around oxide-induced pinning sites. The density of these islands increases …
A Theoretical Study On Silicon And Iii-V Compound Nanotubes, Engi̇n Durgun, Sali̇m Çiraci
A Theoretical Study On Silicon And Iii-V Compound Nanotubes, Engi̇n Durgun, Sali̇m Çiraci
Turkish Journal of Physics
In this paper we present a theoretical study on single-wall silicon and III-V compound nanotubes. First principles plane wave calculations within density functional theory are used to predict energetics and electronic structures of armchair and zigzag nanotubes. The stability of tubular structures is further investigated at finite temperature by ab initio molecular dynamics calculations. Our results indicate that (n,0) zigzag and (n,n) armchair single-wall Si nanotubes are stable for n >= 6. Mechanically, the Si nanotubes are radially soft, however they are strong against axial deformations. Electronic analysis showed that zigzag nanotubes are metallic for n Keywords: silicon, nanotube, first …
Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures, Maxim Dolguikh
Monte Carlo Simulation Of Hole Transport And Terahertz Amplification In Multilayer Delta Doped Semiconductor Structures, Maxim Dolguikh
Electronic Theses and Dissertations
Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole …