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Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Low Pressure Synthesis Of Bulk, Polycrystalline Gallium Nitride, Alberto Argoitia, Cliff C. Hayman, John C. Angus, Long Wang, Jeffrey S. Dyck, Kathleen Kash
Jeffrey Dyck
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Synthesis Of Bulk, Polycrystalline Gallium Nitride At Low Pressures, Alberto Argoitia, John Angus, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk, polycrytalline gallium nitride was crystallized from gallium saturated with nitrogen obtained from a microwave electron cyclotron resonance source. The polycrystalline samples are wurtzitic and n-type. Well-faceted crystals give near-band-edge and yellow band photo-luminescence at both 10K and 300K. The results show that atomic nitrogen is an attractive alternative to high pressure molecular nitrogen for saturation of gallium with nitrogen for synthesis of bulk gallium nitride.
Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Growth Of Bulk, Polycrystalline Gallium And Indium Nitride At Sub-Atmospheric Pressures, John Angus, Alberto Argoitia, Cliff Hayman, Long Wang, Jeffrey Dyck, Kathleen Kash
Jeffrey Dyck
Bulk polycrystalline gallium nitride and indium nitride were crystallized at sub-atmospheric pressures by saturating the pure metals with nitrogen from a microwave electron cyclotron resonance source. Saturation of Ga/In melts with nitrogen led only to the crystallization of gallium nitride. The polycrystralline samples were wurtzitic. The gallium nitride was well faceted, with narrow Raman lineshapes, and showed near-band-edge and yellow band photo-luminescence at both 4K and 300K. The indium nitirde was formed in smaller amounts, was less well faceted, and showed no photoluminescence.