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The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee
The Excitation Mechanism Of Praseodymium-Doped Semiconductors, Paul L. Thee
Theses and Dissertations
This study on praseodymium Pr luminescence in AlxGa1-xAs was conducted to enhance the understanding of the excitation mechanism. Pr was implanted at 390 keV with doses from 5 x 1012 to 5 x 1013 sq cm into AlxGa1-xAs x0.0 to 0.50 wafers which were annealed using the rapid thermal annealing RTA method. Low temperature photoluminescence PL was conducted using an Ar-ion laser and Ge detector. PL emissions of Pr from all hosts include peaks near 1.3 and 1.6 µm which are assigned to the intra-4f transitions of 1G4 yielding 3H5 …
Models For Water Outgassing From Metal Surfaces, Minxu Li
Models For Water Outgassing From Metal Surfaces, Minxu Li
Dissertations, Theses, and Masters Projects
In this study, the outgassing rate from an electropolished stainless steel surface following exposures to H{dollar}\sb2{dollar}O vapor under various conditions was measured. The results of the experiments showed that the outgassing rate is proportional to {dollar}p\sb0\sp{lcub}n{rcub}{dollar}, where {dollar}p\sb0{dollar} is the H{dollar}\sb2{dollar}O exposure pressure and n is about 0.25. The outgassing rate is not as strongly dependent on the system temperature as one would expect if the temperature is kept the same during exposure and pump-down. The outgassing rate is also a function of the exposure time for the first several hours of exposure, indicating that the adsorption saturation time is …