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Growth And Characterization Of Polysilicon Films Deposited By Reactive Plasma Beam Epitaxy , Behnam Moradi
Retrospective Theses and Dissertations
Polycrystalline silicon was deposited at low temperatures (400-550°C) by using a new technique, reactive plasma beam epitaxy. The technique consists of using an intense flux of hydrogen radicals, generated by an electron cyclotron resonance (ECR) source to promote nucleation and crystallinity at low temperatures. The film structure could be smoothly changed from polysilicon to amorphous by changing the flux of incoming H radicals on the surface of the sample. The flux of hydrogen radicals can be controlled by changing the deposition pressure, with lower pressures leading to a higher H radical flux and greater degree of crystallinity. The effect ...