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Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski
Auger Analysis Of Si–H Bonding And Hydrogen Concentration In Hydrogenated Amorphous Silicon, Nancy Burnham, Aj Nelson, Ab Schwartzlander, Se Asher, Ll Kazmerski
Nancy A. Burnham
Auger electron spectroscopy line‐shape analysis of the Si‐L 2 3 V V peak has been performed on hydrogenated amorphous silicon (a‐Si:H). Both a‐Si:H produced by hydrogen implantation of siliconsingle crystals (for analytical standards) and thin films (fabricated for solar cell applications) were examined in these studies. Hydrogen concentrations were confirmed by secondary ion mass spectrometry, and samples having hydrogen content over the range 101 6–102 2 cm− 3 were evaluated. Correlations between the area under the deconvoluted L 2 3 V V transition peak and the known hydrogen content have resulted in a semiquantitative method of determining hydrogen concentration using …
Scanning Auger Microprobe Studies Of Ball Cratered Cds/Cuinse2 Solar Cells, Nancy Burnham, Ll Levenson, Rj Matson, R Noufi, Ll Kazmerski
Scanning Auger Microprobe Studies Of Ball Cratered Cds/Cuinse2 Solar Cells, Nancy Burnham, Ll Levenson, Rj Matson, R Noufi, Ll Kazmerski
Nancy A. Burnham
CdS/CuInSe2solar cell films are typically several micrometers thick. Composition profiles of these films are usually carried out on fracture cross sections by scanning Auger microscopy or by recording Auger spectra during ion milling. For fracture cross sections, the depth resolution depends on the electron beam diameter and the roughness of the fracture surface. Ion milling is time consuming, and artifacts are caused by ion beam faceting. Ball cratering requires only a fraction of an hour and provides significant magnification of the film cross section. There is sufficient contrast, both in optical and electron microscopy, to distinguish between CdS and CuInSe2 …