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Low-Temperature Magnetic Properties Of Submetallic Phosphorous-Doped Silicon, C. T. Murayama, W. G. Clark, Jeff Sanny

Physics Faculty Works

Measurements of the electron-spin-resonance properties of Si:P with dopant concentration of n=2.05×10¹⁸ cm⁻³ (somewhat below the metal-insulating transition) at low temperatures (0.035 to 4.2 K) and low frequencies (11.5-58.2 MHz) are reported. They show a substantial deviation from Curie-law behavior for the susceptibility, in agreement with previous static experiments. An internal field is observed to develop as the temperature is lowered. At 35 mK, the internal field has a magnitude of 2.1 Oe and is directed opposite to the externally applied field. The buildup of the internal field is accompanied by an increase in the resonance linewidth. Both …