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Full-Text Articles in Physics
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Gamma-Ray Radiation Effects In Graphene-Based Transistors With H-Bn Nanometer Film Substrates, E. J. Cazalas, Michael R. Hogsed, S. R. Vangala, Michael R. Snure, John W. Mcclory
Faculty Publications
Radiation effects on graphene field effect transistors (GFETs) with hexagonal boron nitride (h-BN) thin film substrates are investigated using 60Co gamma-ray radiation. This study examines the radiation response using many samples with varying h-BN film thicknesses (1.6 and 20 nm thickness) and graphene channel lengths (5 and 10 μm). These samples were exposed to a total ionizing dose of approximately 1 Mrad(Si). I-V measurements were taken at fixed time intervals between irradiations and postirradiation. Dirac point voltage and current are extracted from the I-V measurements, as well as mobility, Dirac voltage hysteresis, and the total number of GFETs that remain …
Erratum: "Imaging The Three‐Dimensional Orientation And Rotational Mobility Of Fluorescent Emitters Using The Tri‐Spot Point Spread Function", Oumeng Zhang, Jin Lu, Tianben Ding, Matthew D. Lew
Erratum: "Imaging The Three‐Dimensional Orientation And Rotational Mobility Of Fluorescent Emitters Using The Tri‐Spot Point Spread Function", Oumeng Zhang, Jin Lu, Tianben Ding, Matthew D. Lew
Electrical & Systems Engineering Publications and Presentations
In the original paper, a calibration error exists in the image-formation model used to analyze experimental images taken by our microscope, causing a bias in the orientation measurements in Figs. 2 and 3. The updated measurements are shown in Fig. E1. We have also updated the supplementary material for the original article to discuss the revised PSF model and estimation algorithms (supplementary material 2) and show the revised model and measurements (Figs. S1, S3, S7, S8, and S10–S13).
Voltage Controlled Magnetism In Cr2o3 Based All-Thin-Film Systems, Junlei Wang, Will Echtenkamp, Ather Mahmood, Christian Binek
Voltage Controlled Magnetism In Cr2o3 Based All-Thin-Film Systems, Junlei Wang, Will Echtenkamp, Ather Mahmood, Christian Binek
Christian Binek Publications
Voltage-control of exchange biases through active selection of distinct domain states of the magnetoelectric and antiferromagnetic pinning layer is demonstrated for Cr2O3/CoPd heterostructures. Progress and obstacles towards an isothermal switching of exchange bias are discussed. An alternative approach avoiding exchange bias for voltage-controlled memory exploits boundary magnetization at the surface of Cr2O3 as voltage-controlled state variable. We demonstrate readout and switching of boundary magnetization in ultra-thin Cr2O3/Pt Hall bar devices where reversal of boundary magnetization is achieved via magnetoelectric annealing with simultaneously applied ±0.5 V and 400 mT electric and magnetic fields.
Space-Charge Limited Conduction In Epitaxial Chromia Films Grown On Elemental And Oxide-Based Metallic Substrates, C.-P. Kwan, Mike Street, Ather Mahmood, Will Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, Uttam Singisetti, Christian Binek, J. P. Bird
Space-Charge Limited Conduction In Epitaxial Chromia Films Grown On Elemental And Oxide-Based Metallic Substrates, C.-P. Kwan, Mike Street, Ather Mahmood, Will Echtenkamp, M. Randle, K. He, J. Nathawat, N. Arabchigavkani, B. Barut, S. Yin, R. Dixit, Uttam Singisetti, Christian Binek, J. P. Bird
Christian Binek Publications
We study temperature dependent (200 – 400 K) dielectric current leakage in high-quality, epitaxial chromia films, synthesized on various conductive substrates (Pd, Pt and V2O3). We find that trap-assisted space-charge limited conduction is the dominant source of electrical leakage in the films, and that the density and distribution of charge traps within them is strongly dependent upon the choice of the underlying substrate. Pd-based chromia is found to exhibit leakage consistent with the presence of deep, discrete traps, a characteristic that is related to the known properties of twinning defects in the material. The Pt- and V2O3-based films, in contrast, …
Studying The Interface Between Croconic Acid Thin Films And Substrates Using A Slow Positron Beam, Dean Peterson, Jiandang Liu, Jonas Etzweiler, Gabriel Sontoyo, Sara J. Callori, Kimberley R. Cousins, Timothy Usher, Renwu Zhang
Studying The Interface Between Croconic Acid Thin Films And Substrates Using A Slow Positron Beam, Dean Peterson, Jiandang Liu, Jonas Etzweiler, Gabriel Sontoyo, Sara J. Callori, Kimberley R. Cousins, Timothy Usher, Renwu Zhang
Physics Faculty Publications
Croconic acid (CA) is the first organic ferroelectric with a spontaneous polarity in bulk samples comparable to its inorganic counterparts. As a natural extension of study, ultrathin CA films (∼nm scale) were investigated to reveal ferroelectric effects in films on different substrates for their fundamental and industrial significance. However, the void defect at the interface between the film and substrate is presumed to interfere with surface effects. In this work, a non-invasive technique, a slow positron beam, coupled with Doppler broadening energy spectroscopy (DBES), is applied to study the void defects within the interfacial layer between CA films and Si …