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Full-Text Articles in Physics
Femtosecond Spectrotemporal Magneto-Optics, J.-Y. Bigot, L. Guidoni, E. Beaurepaire, Peter N. Saeta
Femtosecond Spectrotemporal Magneto-Optics, J.-Y. Bigot, L. Guidoni, E. Beaurepaire, Peter N. Saeta
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A new method to measure and analyze the time and spectrally resolved polarimetric response of magnetic materials is presented. It allows us to study the ultrafast magnetization dynamics of a CoPt3 ferromagnetic film. The analysis of the pump-induced rotation and ellipticity detected by a broad spectrum probe beam shows that magneto-optical signals predominantly reflect the spin dynamics in ferromagnets.
Stability Of Self-Similar Solutions For Van Der Waals Driven Thin Film Rupture, Thomas P. Witelski, Andrew J. Bernoff
Stability Of Self-Similar Solutions For Van Der Waals Driven Thin Film Rupture, Thomas P. Witelski, Andrew J. Bernoff
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Recent studies of pinch-off of filaments and rupture in thin films have found infinite sets of first-type similarity solutions. Of these, the dynamically stable similarity solutions produce observable rupture behavior as localized, finite-time singularities in the models of the flow. In this letter we describe a systematic technique for calculating such solutions and determining their linear stability. For the problem of axisymmetric van der Waals driven rupture (recently studied by Zhang and Lister), we identify the unique stable similarity solution for point rupture of a thin film and an alternative mode of singularity formation corresponding to annular “ring rupture.”
Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher
Photoluminescence Properties Of Silicon Quantum-Well Layers, Peter N. Saeta, A. C. Gallagher
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Nanometer-scale crystal silicon films surrounded by SiO2 were prepared by oxidizing silicon-on-insulator substrates prepared from SIMOX (separation by implantation of oxygen) and crystallized hydrogenated amorphous silicon films. Average silicon layer thickness was determined from reflection spectra. When sufficiently thin (<2 >nm), all layers emitted red photoluminescence under blue and UV cw excitation, with a spectrum that did not depend on the mean layer thickness. The spectrum was roughly Gaussian with a peak energy of 1.65 eV, which is lower than for most porous silicon spectra. The time scale for the luminescence decay was ~35 μs at room temperature and …
Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi
Optical Rectification At Semiconductor Surfaces, Shun Lien Chuang, Stefan Schmitt-Rink, Benjamin I. Greene, Peter N. Saeta, Anthony F. J. Levi
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We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations.
Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur
Ultrafast Electronic Disordering During Femtosecond Laser Melting Of Gaas, Peter N. Saeta, J.-K. Wang, Y. Siegal, N. Bloembergen, E. Mazur
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We have observed an ultrarapid electronic phase transformation to a centrosymmetric electronic state during laser excitation of GaAs with intense femtosecond pulses. Reflection second-harmonic intensity from the upper 90 atomic layers vanishes within 100 fs; reflectivity rises within 0.5 ps to a steady value characteristic of a metallic molten phase, long before phonon emission can heat the lattice to the melting temperature.