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Full-Text Articles in Physics
Review Article: Molecular Beam Epitaxy Of Lattice-Matched Inalas And Ingaas Layers On Inp (111)A, (111)B, And (110), Christopher D. Yerino, Baolai Liang, Diana L. Huffaker, Paul J. Simmonds, Minjoo Larry Lee
Review Article: Molecular Beam Epitaxy Of Lattice-Matched Inalas And Ingaas Layers On Inp (111)A, (111)B, And (110), Christopher D. Yerino, Baolai Liang, Diana L. Huffaker, Paul J. Simmonds, Minjoo Larry Lee
Physics Faculty Publications and Presentations
For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III–Vs on (111)- or (110)-oriented substrates These applications include: next-generation field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review …
Selective-Area Growth Of Heavily N–Doped Gaas Nanostubs On Si(001) By Molecular Beam Epitaxy, Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C.S. Woo
Selective-Area Growth Of Heavily N–Doped Gaas Nanostubs On Si(001) By Molecular Beam Epitaxy, Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C.S. Woo
Physics Faculty Publications and Presentations
Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth(SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growthparameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAsgrowth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of the selectively grownGaAs …
Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker
Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker
Physics Faculty Publications and Presentations
There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm2. In addition, the …