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Full-Text Articles in Physics

Improved Gas Sensing Performance Of Ald Azo 3-D Coated Zno Nanorods, P. Lin, X. Chen, K. Zhang, H. Baumgart Dec 2018

Improved Gas Sensing Performance Of Ald Azo 3-D Coated Zno Nanorods, P. Lin, X. Chen, K. Zhang, H. Baumgart

Electrical & Computer Engineering Faculty Publications

This paper reports an enhancement on the sensing performance of ZnO nanorod ethanol sensors with a new approach by utilizing nested coatings of Aluminum doped ZnO (AZO) thin films by Atomic Layer Deposition (ALD) technology. ZnO nanorods were grown by the hydrothermal method with the ZnO seed layer synthesized on Silicon wafers by ALD. To enhance the sensing performance of ZnO nanorod ethanol sensors, multiple coated AZO thin film 3-D coatings were deposited on the surface of the intrinsic ZnO nanorods by ALD.To investigate the sensing performance of the ZnO nanorods sensor for the detection of ethanol vapor, a gas …


Electrostatic Design And Conditioning Of A Triple Point Junction Shield For A −200 Kv Dc High Voltage Photogun, G. Palacios-Serrano, F. Hannon, C. Hernandez-Garcia, M. Poelker, H. Baumgart Oct 2018

Electrostatic Design And Conditioning Of A Triple Point Junction Shield For A −200 Kv Dc High Voltage Photogun, G. Palacios-Serrano, F. Hannon, C. Hernandez-Garcia, M. Poelker, H. Baumgart

Electrical & Computer Engineering Faculty Publications

Nuclear physics experiments performed at the Continuous Electron Beam Accelerator Facility (CEBAF) at the Jefferson Lab require a DC high voltage photogun to generate polarized electron beams from GaAs photocathodes. The photogun uses a tapered ceramic insulator that extends into the vacuum chamber and mechanically holds the cathode electrode. Increasing the operating voltage from nominal −130 kV to −200 kV will provide lower beam emittance, better transmission through injector apertures, and improved photocathode lifetime. This desire to increase the photogun operating voltage led to the design of a triple-point-junction shield electrode which minimizes the electric field at the delicate insulator-metal-vacuum …


Characterization And Analysis Of Ultrathin Cigs Films And Solar Cells Deposited By 3-Stage Process, Grace Rajan, Krishna Aryal, Shankar Karki, Puruswottam Aryal, Robert W. Collins, Sylvain Marsillac May 2018

Characterization And Analysis Of Ultrathin Cigs Films And Solar Cells Deposited By 3-Stage Process, Grace Rajan, Krishna Aryal, Shankar Karki, Puruswottam Aryal, Robert W. Collins, Sylvain Marsillac

Electrical & Computer Engineering Faculty Publications

In view of the large-scale utilization of Cu(In,Ga)Se2 (CIGS) solar cells for photovoltaic application, it is of interest not only to enhance the conversion efficiency but also to reduce the thickness of the CIGS absorber layer in order to reduce the cost and improve the solar cell manufacturing throughput. In situ and real-time spectroscopic ellipsometry (RTSE) has been used conjointly with ex situ characterizations to understand the properties of ultrathin CIGS films. This enables monitoring the growth process, analyzing the optical properties of the CIGS films during deposition, and extracting composition, film thickness, grain size, and surface roughness which …


Bandgap Profiling In Cigs Solar Cells Via Valence Electron Energy-Loss Spectroscopy, Julia I. Deitz, Shankar Karki, Sylvain X. Marsillac, Tyler J. Grassman Mar 2018

Bandgap Profiling In Cigs Solar Cells Via Valence Electron Energy-Loss Spectroscopy, Julia I. Deitz, Shankar Karki, Sylvain X. Marsillac, Tyler J. Grassman

Electrical & Computer Engineering Faculty Publications

A robust, reproducible method for the extraction of relative bandgap trends from scanning transmission electron microscopy (STEM) based electron energy-loss spectroscopy (EELS) is described. The effectiveness of the approach is demonstrated by profiling the bandgap through a CuIn1-xGaxSe2 solar cell that possesses intentional Ga/(In + Ga) composition variation. The EELS-determined bandgap profile is compared to the nominal profile calculated from compositional data collected via STEM-based energy dispersive X-ray spectroscopy. The EELS based profile is found to closely track the calculated bandgap trends, with only a small, fixed offset difference. This method, which is particularly advantageous …


Real Time Spectroscopic Ellipsometry Analysis Of First Stage Cuin1-Xgaxse2 Growth: Indium-Gallium Selenide Co-Evaporation, Puja Pradhan, Puruswottam Aryal, Dinesh Attygalle, Abdel-Rahman Ibdah, Prakash Koirala, Jian Li, Khagendra P. Bhandari, Geethika K. Liyanage, Randy J. Ellingson, Michael J. Heben, Sylvain Marsillac, Robert W. Collins, Nikolas J. Podraza Jan 2018

Real Time Spectroscopic Ellipsometry Analysis Of First Stage Cuin1-Xgaxse2 Growth: Indium-Gallium Selenide Co-Evaporation, Puja Pradhan, Puruswottam Aryal, Dinesh Attygalle, Abdel-Rahman Ibdah, Prakash Koirala, Jian Li, Khagendra P. Bhandari, Geethika K. Liyanage, Randy J. Ellingson, Michael J. Heben, Sylvain Marsillac, Robert W. Collins, Nikolas J. Podraza

Electrical & Computer Engineering Faculty Publications

Real time spectroscopic ellipsometry (RTSE) has been applied for in-situ monitoring of the first stage of copper indium-gallium diselenide (CIGS) thin film deposition by the three-stage co-evaporation process used for fabrication of high efficiency thin film photovoltaic (PV) devices. The first stage entails the growth of indium-gallium selenide (In1-xGax)₂Se₃ (IGS) on a substrate of Mo-coated soda lime glass maintained at a temperature of 400 °C. This is a critical stage of CIGS deposition because a large fraction of the final film thickness is deposited, and as a result precise compositional control is desired in order to …


Transient Lattice Deformations Of Crystals Studied By Means Of Ultrafast Time-Resolved X-Ray And Electron Diffraction, Runze Li, Kyle Sundqvist, Jie Chen, H. E. Elsayed-Ali, Jie Zhang, Peter M. Rentzepis Jan 2018

Transient Lattice Deformations Of Crystals Studied By Means Of Ultrafast Time-Resolved X-Ray And Electron Diffraction, Runze Li, Kyle Sundqvist, Jie Chen, H. E. Elsayed-Ali, Jie Zhang, Peter M. Rentzepis

Electrical & Computer Engineering Faculty Publications

Ultrafast lattice deformation of tens to hundreds of nanometer thick metallic crystals, after femtosecond laser excitation, was measured directly using 8.04 keV subpicosecond x-ray and 59 keV femtosecond electron pulses. Coherent phonons were generated in both single crystal and polycrystalline films. Lattice compression was observed within the first few picoseconds after laser irradiation in single crystal aluminum, which was attributed to the generation of a blast force and the propagation of elastic waves. The different time scales of lattice heating for tens and hundreds nanometer thick films are clearly distinguished by electron and x-ray pulse diffraction. The electron and lattice …


Plasma Medicine: A Brief Introduction, Mounir Laroussi Jan 2018

Plasma Medicine: A Brief Introduction, Mounir Laroussi

Electrical & Computer Engineering Faculty Publications

This mini review is to introduce the readers of Plasma to the field of plasma medicine. This is a multidisciplinary field of research at the intersection of physics, engineering, biology and medicine. Plasma medicine is only about two decades old, but the research community active in this emerging field has grown tremendously in the last few years. Today, research is being conducted on a number of applications including wound healing and cancer treatment. Although a lot of knowledge has been created and our understanding of the fundamental mechanisms that play important roles in the interaction between low temperature plasma and …


Magnetron Sputtering Of Nb3Sn For Srf Cavities, Md. N. Sayeed, H. Elsayed-Ali, G. V. Eremeev, M. J. Kelley, U. Pudasaini, C. E. Reece Jan 2018

Magnetron Sputtering Of Nb3Sn For Srf Cavities, Md. N. Sayeed, H. Elsayed-Ali, G. V. Eremeev, M. J. Kelley, U. Pudasaini, C. E. Reece

Electrical & Computer Engineering Faculty Publications

Nb3Sn is a potential candidate for surface material of SRF cavities since it can enable the cavity to operate at higher temperatures with high quality factor and at an increased accelerating gradient. Nb-Sn films were deposited using magnetron sputtering of individual Nb and Sn targets onto Nb and sapphire substrates. The as-deposited films were annealed at 1200 °C for 3 hours. The films were characterized for their structure by X-ray Diffraction (XRD), morphology by Field Emission Scanning Electron Microscopy (FESEM), and composition by Energy Dispersive X-ray Spectroscopy (EDS) and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The …