Open Access. Powered by Scholars. Published by Universities.®

Physics Commons™

Open Access. Powered by Scholars. Published by Universities.®

Series

2002

Electrical and Computer Engineering

Articles 1 - 13 of 13

Full-Text Articles in Physics

Chaotic Free-Space Laser Communication Over Turbulent Channel, N. F. Rulkov, Mikhail Vorontsov, L. Illing Dec 2002

Chaotic Free-Space Laser Communication Over Turbulent Channel, N. F. Rulkov, Mikhail Vorontsov, L. Illing

Electro-Optics and Photonics Faculty Publications

The dynamics of errors caused by atmospheric turbulence in a self-synchronizing chaos-based communication system that stably transmits information over a ∼5  km free-space laser link is studied experimentally. Binary information is transmitted using a chaotic sequence of short-term pulses as a carrier. The information signal slightly shifts the chaotic time position of each pulse depending on the information bit. We report the results of an experimental analysis of the atmospheric turbulence in the channel and the impact of turbulence on the bit-error-rate performance of this chaos-based communication system.

Go to article

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman Jun 2002

Cuin1-Xalxse2 Thin Films And Solar Cells, P. D. Paulson, M. W. Haimbodi, S. Marsillac, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

CuIn[sub 1-x]Al[sub x]Se[sub 2] thin films are investigated for their application as the absorber layer material for high efficiency solar cells. Single-phase CuIn[sub 1-x]Al[sub x]Se[sub 2] films were deposited by four source elemental evaporation with a composition range of 0≤x≤0.6. All these films demonstrate a normalized subband gap transmission >85% with 2 µm film thickness. Band gaps obtained from spectroscopic ellipsometry show an increase with the Al content in the CuIn[sub 1-x]Al[sub x]Se[sub 2] film with a bowing parameter of 0.62. The structural properties investigated using x-ray diffraction measurements show a decrease in lattice spacing as the Al content increases. …

Go to article

Effect Of Ga Content On Defect States In Cuin1-XGaXSe2 Photovoltaic Devices, Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, Angus Rockett Jan 2002

Effect Of Ga Content On Defect States In Cuin1-XGaXSe2 Photovoltaic Devices, Jennifer T. Heath, J. David Cohen, William N. Shafarman, Dongxiang Liao, Angus Rockett

Faculty Publications

Defects in the band gap of CuIn1-xGaxSe2 have been characterized using transient photocapacitance spectroscopy. The measured spectra clearly show response from a band of defects centered around 0.8 eV from the valence band edge as well as an exponential distribution of band tail states. Despite Ga contents ranging from Ga/(In+Ga)=0.0 to 0.8, the defect bandwidth and its position relative to the valence band remain constant. This defect band may act as an important recombination center, contributing to the decrease in device efficiency with increasing Ga content.

Go to article

A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson Jan 2002

A 0.5 Μm Thick Polysilicon Schottky Diode With Rectification Ratio Of 10^6, Elena A. Guliants, Chunhai Ji, Young J. Song, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

Polycrystalline Si films, 0.5-mm thick, were obtained as a result of metal-induced growth by sputtering from a Si target on 25 nm thick Ni prelayers at 525 °C. Silicon grew heteroepitaxially on the NiSi2 layer formed due to the reaction between the sputtered Si atoms and Ni. Schottky diodes were fabricated on the Si films by deposition of a Schottky metal on the front surface of the film while Ni disilicide provided an intimate ohmic contact at the back. A Pd/n-Si diode using an n-Si film annealed for 2 h at 700 °C in forming gas demonstrated a rectification ratio …

Go to article

Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson Jan 2002

Self-Assembly Of Spatially Separated Silicon Structures By Si Heteroepitaxy On Ni Disilicide, Elena A. Guliants, Chunhai Ji, Wayne A. Anderson

Electrical and Computer Engineering Faculty Publications

A nonlithographic approach to produce self-assembled spatially separated Si structures for nanoelectronic applications was developed, employing the metal-induced silicon growth. Densely packed Si whiskers, 500–800 nm thick and up to 2500 nm long, were obtained by magnetron sputtering of Si on a 25 nm thick Ni prelayer at 575 °C. The nucleation of the NiSi2 compound at the Ni–Si interface followed by the Si heteroepitaxy on the lattice-matched NiSi2 is suggested to be the driving force for the whisker formation.

Go to article

Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr. Jan 2002

Implementation Of A Si/Sic Hybrid Optically Controlled High-Power Switching Device, Prashant Bhadri, Kuntao Ye, Elena A. Guliants, Fred R. Beyette Jr.

Electrical and Computer Engineering Faculty Publications

The ever-increasing performance and economy of operation requirements placed on commercial and military transport aircraft are resulting in very complex systems. As a result, the use of fiber optic component technology has lead to high data throughput, immunity to EMI, reduced certification and maintenance costs and reduced weight features. In particular, in avionic systems, data integrity and high data rates are necessary for stable flight control. Fly-by-Light systems that use optical signals to actuate the flight control surfaces of an aircraft have been suggested as a solution to the EMI problem in avionic systems. Current fly-by-light systems are limited by …

Go to article

Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee Jan 2002

Translation Of 'Balika Badhu: A Selected Anthology Of Bengali Short Stories', Monish Ranjan Chatterjee

Electrical and Computer Engineering Faculty Publications

This project, which began with the desire to render into English a rather long tale by Bimal Kar about five years ago, eventually grew into a considerably more extended compilation of Bengali short stories by 10 of the most well-known practitioners of that art since the heyday of Rabindranath Tagore. The collection is limited in many ways, not the least of which being that no woman writer has been included, and that it contains only a baker's dozen stories (if we count Bonophool's micro-stories collectively as one ) — a number pitifully small considering the vast and prolific field of …

Go to article

Angular Range For Reflection Of P-Polarized Light At The Surface Of An Absorbing Medium With Reflectance Below That At Normal Incidence, R. M.A. Azzam, Ericson E. Ugbo Jan 2002

Angular Range For Reflection Of P-Polarized Light At The Surface Of An Absorbing Medium With Reflectance Below That At Normal Incidence, R. M.A. Azzam, Ericson E. Ugbo

Electrical Engineering Faculty Publications

The range of incidence angle, 0 < φ < φe, over which p-polarized light is reflected at interfaces between transparent and absorbing media with reflectance below that at normal incidence is determined. Contours of constant φe in the complex plane of the relative dielectric constant ε are presented. A method for determining the real and imaginary parts of the complex refractive index, ε1/2 = n + jk, which is based on measuring φe and the pseudo-Brewster angle φpB, is viable in the domain of fractional optical constants, n, k < 1.

Go to article

Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali Jan 2002

Atomic Hydrogen Cleaning Of Inp(100): Electron Yield And Surface Morphology Of Negative Electron Affinity Activated Surfaces, M. A. Hafez, H. E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

Atomic hydrogen cleaning of the InP(100) surface has been investigated using quantitative reflection high-energy electron diffraction. The quantum efficiency of the surface when activated to negative electron affinity was correlated with surface morphology. The electron diffraction patterns showed that hydrogen cleaning is effective in removing surface contaminants, leaving a clean, ordered, and (2×4)-reconstructed surface. After activation to negative electron affinity, a quantum efficiency of ∼6% was produced in response to photoactivation at 632 nm. Secondary electron emission from the hydrogen-cleaned InP(100)-(2×4) surface was measured and correlated to the quantum efficiency. The morphology of the vicinal InP(100) surface was investigated using …

Go to article

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman Jan 2002

High-Efficiency Solar Cells Based On Cu(Inal)Se[Sub 2] Thin Films, S. Marsillac, P. D. Paulson, M. W. Haimbodi, R. W. Birkmire, W. N. Shafarman

Electrical & Computer Engineering Faculty Publications

A Cu(InAl)Se2solar cell with 16.9% efficiency is demonstrated using a Cu(InAl)Se2thin film deposited by four-source elemental evaporation and a device structure of glass/Mo/Cu(InAl)Se2/CdS/ZnO/indium tin oxide/(Ni/Algrid)/MgF2. A key to high efficiency is improved adhesion between the Cu(InAl)Se2 and the Mo back contact layer, provided by a 5-nm-thick Ga interlayer, which enabled the Cu(InAl)Se2 to be deposited at a 530 °C substrate temperature. Film and device properties are compared to Cu(InGa)Se2 with the same band gap of 1.16 eV. The solar cells have similar behavior, with performance limited by recombination through …

Go to article

121.6 Nm Radiation Source For Advanced Lithography, Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta Jan 2002

121.6 Nm Radiation Source For Advanced Lithography, Jianxun Yan, Ashraf El-Dakrouri, Mounir Laroussi, Mool C. Gupta

Electrical & Computer Engineering Faculty Publications

A vacuum ultraviolet (VUV) light source based on a high-pressure cylindrical dielectric barrier discharge (DBD) has been developed. Intense and spectrally clean Lyman-α line at 121.6 nm was obtained by operating a DBD discharge in neon with a small admixture of hydrogen. The spectrum, optical power, stability, and efficiency of the source were measured. The influence of the gas mixture and total gas pressure on the VUV intensity has been investigated. Maximum optical power of 3.2 W and spectral width 0.03 nm was achieved. Power stability of 2% for 100 h of operation has also been obtained. The newly developed …

Go to article

Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Acceleration Element For Femtosecond Electron Pulse Compression, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

An acceleration element is proposed for compressing the electron pulse duration in a femtosecond photoelectron gun. The element is a compact metal cavity with curved-shaped walls. An external voltage is applied to the cavity where a special electric field forms in such a way that the slow electrons in the electron pulse front are accelerated more than the fast electrons, and consequently the electron pulse duration will be compressed. The distribution of the electric field inside the acceleration cavity is analyzed for the geometry of the cavity. The electron dynamics in this acceleration cavity is also investigated numerically. Numerical results …

Go to article

Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali Jan 2002

Electron Pulse Broadening Due To Space Charge Effects In A Photoelectron Gun For Electron Diffraction And Streak Camera Systems, Bao-Liang Qian, Hani E. Elsayed-Ali

Electrical & Computer Engineering Faculty Publications

The electron pulse broadening and energy spread, caused by space charge effects, in a photoelectron gun are studied analytically using a fluid model. The model is applicable in both the photocathode-to-mesh region and the postanode electron drift region. It is found that space charge effects in the photocathode-to-mesh region are generally unimportant even for subpicosecond pulses. However, because of the long drift distance, electron pulse broadening due to space charge effects in the drift region is usually significant and could be much larger than the initial electron pulse duration for a subpicosecond electron pulse. Space charge effects can also lead …

Go to article