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Physics Faculty Publications and Presentations

III-V semiconductors

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Articles 1 - 5 of 5

Full-Text Articles in Physics

Review Article: Molecular Beam Epitaxy Of Lattice-Matched Inalas And Ingaas Layers On Inp (111)A, (111)B, And (110), Christopher D. Yerino, Baolai Liang, Diana L. Huffaker, Paul J. Simmonds, Minjoo Larry Lee Jan 2017

Review Article: Molecular Beam Epitaxy Of Lattice-Matched Inalas And Ingaas Layers On Inp (111)A, (111)B, And (110), Christopher D. Yerino, Baolai Liang, Diana L. Huffaker, Paul J. Simmonds, Minjoo Larry Lee

Physics Faculty Publications and Presentations

For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III–Vs on (111)- or (110)-oriented substrates These applications include: next-generation field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is ...


Selective-Area Growth Of Heavily N–Doped Gaas Nanostubs On Si(001) By Molecular Beam Epitaxy, Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C.S. Woo Apr 2016

Selective-Area Growth Of Heavily N–Doped Gaas Nanostubs On Si(001) By Molecular Beam Epitaxy, Yoon Jung Chang, Paul J. Simmonds, Brett Beekley, Mark S. Goorsky, Jason C.S. Woo

Physics Faculty Publications and Presentations

Using an aspect ratio trapping technique, we demonstrate molecular beam epitaxy of GaAs nanostubs on Si(001) substrates. Nanoholes in a SiO2 mask act as a template for GaAs-on-Si selective-area growth(SAG) of nanostubs 120 nm tall and ≤100 nm in diameter. We investigate the influence of growthparameters including substrate temperature and growth rate on SAG. Optimizing these parameters results in complete selectivity with GaAsgrowth only on the exposed Si(001). Due to the confined-geometry, strain and defects in the GaAs nanostubs are restricted in lateral dimensions, and surface energy is further minimized. We assess the electrical properties of ...


Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker Mar 2015

Gasb Thermophotovoltaic Cells Grown On Gaas By Molecular Beam Epitaxy Using Interfacial Misfit Arrays, Bor-Chau Juang, Ramesh B. Laghumavarapu, Brandon J. Foggo, Paul J. Simmonds, Andrew Lin, Baolai Liang, Diana L. Huffaker

Physics Faculty Publications and Presentations

There exists a long-term need for foreign substrates on which to grow GaSb-based optoelectronic devices. We address this need by using interfacial misfit arrays to grow GaSb-based thermophotovoltaic cells directly on GaAs (001) substrates and demonstrate promising performance. We compare these cells to control devices grown on GaSb substrates to assess device properties and material quality. The room temperature dark current densities show similar characteristics for both cells on GaAs and on GaSb. Under solar simulation the cells on GaAs exhibit an open-circuit voltage of 0.121 V and a short-circuit current density of 15.5 mA/cm2. In ...


Hybrid Type-I Inas/Gaas And Type-Ii Gasb/Gaas Quantum Dot Structure With Enhanced Photoluminescence, Hai-Ming Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, Diana L. Huffaker Mar 2015

Hybrid Type-I Inas/Gaas And Type-Ii Gasb/Gaas Quantum Dot Structure With Enhanced Photoluminescence, Hai-Ming Ji, Baolai Liang, Paul J. Simmonds, Bor-Chau Juang, Tao Yang, Robert J. Young, Diana L. Huffaker

Physics Faculty Publications and Presentations

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL.These hybrid QD structures show potential for high efficiency QD solar cell applications.


Strain-Driven Growth Of Gaas(111) Quantum Dots With Low Fine Structure Splitting, Paul J. Simmonds Dec 2014

Strain-Driven Growth Of Gaas(111) Quantum Dots With Low Fine Structure Splitting, Paul J. Simmonds

Physics Faculty Publications and Presentations

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting(FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements ...