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Stable Highly Conductive Zno Via Reduction Of Zn Vacancies, David C. Look, Timothy C. Droubay, Scott A. Chambers

Physics Faculty Publications

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H₂produces a resistivity of 1.5 × 10⁻⁴ Ω-cm, stable to 500 °C. The resistivity can be further reduced to 1.2 × 10⁻⁴ Ω-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration N_A to 5 × 10¹⁹ cm⁻³, only 3% of the Ga-donor concentration N_D of 1.6 × 10²¹ cm⁻³, with N_D and N_A determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 …