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Ga-Related Photoluminescence Lines In Ga-Doped Zno Grown By Plasma-Assisted Molecular-Beam Epitaxy, Z. Yang, David C. Look, J. L. Liu

Physics Faculty Publications

Low-temperature photoluminescence (PL) and temperature-dependent Hall-effect (T-Hall) measurements were carried out in undoped and Ga-doped ZnO thin films grown by molecular-beam epitaxy. As the carrier concentration increases from 1.8×10¹⁸ to 1.8×10²⁰ cm⁻³, the dominant PL line at 9 K changes from I₁ (3.368–3.371 eV) to I_DA (3.317–3.321 eV), and finally to I₈ (3.359 eV). The dominance of I₁, due to ionized-donor bound excitons, is unexpected in n-type samples but is shown to be consistent with the T-Hall results. We also show that I_DA has characteristics of …