Physics Commons^™

In-Implanted Zno: Controlled Degenerate Surface Layer, David C. Look, Gary C. Farlow, F. Yaqoob, L. H. Vanamurthy, M. Huang

Physics Faculty Publications

In was implanted into bulk ZnO creating a square profile with a thickness of about 100 nm and an In concentration of about 1×10²⁰ cm^-3. The layer was analyzed with Rutherford backscattering, temperature-dependent Hall effect, and low-temperature photoluminescence measurements. The implantation created a nearly degenerate carrier concentration n of about 2×10¹⁹ cm^-3, but with a very low mobility μ, increasing from about 0.06 cm²/V s at 20 K to about 2 cm²/V s at 300 K. However, after annealing at 600 °C for 30 min, n increased to about 5×10 …