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Wright State University

Semiconductor growth

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Full-Text Articles in Physics

Stable Highly Conductive Zno Via Reduction Of Zn Vacancies, David C. Look, Timothy C. Droubay, Scott A. Chambers Jan 2012

Stable Highly Conductive Zno Via Reduction Of Zn Vacancies, David C. Look, Timothy C. Droubay, Scott A. Chambers

Physics Faculty Publications

Growth of Ga-doped ZnO by pulsed laser deposition at 200 °C in an ambient of Ar and H2produces a resistivity of 1.5 × 10−4 Ω-cm, stable to 500 °C. The resistivity can be further reduced to 1.2 × 10−4 Ω-cm by annealing on Zn foil, which reduces the compensating Zn-vacancy acceptor concentration NA to 5 × 1019 cm−3, only 3% of the Ga-donor concentration ND of 1.6 × 1021 cm−3, with ND and NA determined from a degenerate mobility theory. The plasmon-resonance wavelength is only 1060 nm, further bridging ...


Highly Conductive Zno Grown By Pulsed Laser Deposition In Pure Ar, Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang Aug 2010

Highly Conductive Zno Grown By Pulsed Laser Deposition In Pure Ar, Robin C. Scott, Kevin D. Leedy, Burhan Bayraktaroglu, David C. Look, Yong-Hang Zhang

Physics Faculty Publications

Ga-doped ZnO was deposited by pulsed laser deposition at 200 °C on SiO2/Si, Al2O3, or quartz in 10 mTorr of pure Ar. The as-grown, bulk resistivity at 300 K is 1.8×10−4 Ω cm, three-times lower than that of films deposited at 200 °C in 10 mTorr of O2 followed by an anneal at 400 °C in forming gas. Furthermore, depth uniformity of the electrical properties is much improved. Mobility analysis shows that this excellent resistivity is mostly due to an increase in donor concentration, rather than a decrease in acceptor concentration ...


Mobility Analysis Of Highly Conducting Thin Films: Application To Zno, David C. Look, K. D. Leedy, D. H. Tomich, B. Bayraktaroglu Feb 2010

Mobility Analysis Of Highly Conducting Thin Films: Application To Zno, David C. Look, K. D. Leedy, D. H. Tomich, B. Bayraktaroglu

Physics Faculty Publications

Hall-effect measurements have been performed on a series of highly conductive thin films of Ga-doped ZnO grown by pulsed laser deposition and annealed in a forming-gas atmosphere (5% H2 in Ar). The mobility as a function of thickness d is analyzed by a simple formula involving only ionized-impurity and boundary scattering and having a single fitting parameter, the acceptor/donor concentration ratio K = NA/ND. For samples with d = 3–100 nm, Kavg = 0.41, giving ND = 4.7×1020 and NA = 1.9×1020 cm−3. Thicker samples require a two-layer ...


Electron And Hole Traps In N-Doped Zno Grown On P-Type Si Substrate By Mocvd, Zhaoqiang Fang, Bruce B. Claflin, David C. Look, Lei L. Kerr, Xiaonan Li Jan 2007

Electron And Hole Traps In N-Doped Zno Grown On P-Type Si Substrate By Mocvd, Zhaoqiang Fang, Bruce B. Claflin, David C. Look, Lei L. Kerr, Xiaonan Li

Physics Faculty Publications

Electron and hole traps in N-doped ZnO were investigated using a structure of n+-ZnO:Al/i-ZnO/ZnO:N grown on a p-Si substrate by metalorganic chemical vapor deposition (for growth of the ZnO:N layer) and sputtering deposition (for growth of the i-ZnO and n+-ZnO:Al layers). Current-voltage and capacitance-voltage characteristics measured at temperatures from 200 to 400 K show that the structure is an abrupt n+p diode with very low leakage currents. By using deep level transient spectroscopy, two hole traps, H3 (0.35 eV) and H4 (0.48 eV), are found in ...


Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look Dec 2000

Ga-Doped Zno Films Grown On Gan Templates By Plasma-Assisted Molecular-Beam Epitaxy, H. J. Ko, Yanfang Chen, S. K. Hong, H. Wenisch, T. Yao, David C. Look

Physics Faculty Publications

We have investigated the structural and optical properties of Ga-doped ZnO films grown on GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga-doped ZnO films can be controlled from 1.33×1018/cm3 to 1.13×1020/cm3. Despite high Ga incorporation, the linewidth of (0002) ω-rocking curves of Ga-doped ZnO films still lies in the range from 5 to 15 arc min. Photoluminescence (PL) spectra of Ga-doped ZnO films show dominant near-bandedge emission with negligibly weak deep-level emission, independent of carrier concentration. The PL spectrum exhibits a new emission line at 3.358 ...