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Wright State University

Ion implantation

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Articles 1 - 3 of 3

Full-Text Articles in Physics

In-Implanted Zno: Controlled Degenerate Surface Layer, David C. Look, Gary C. Farlow, F. Yaqoob, L. H. Vanamurthy, M. Huang May 2009

In-Implanted Zno: Controlled Degenerate Surface Layer, David C. Look, Gary C. Farlow, F. Yaqoob, L. H. Vanamurthy, M. Huang

Physics Faculty Publications

In was implanted into bulk ZnO creating a square profile with a thickness of about 100 nm and an In concentration of about 1×1020 cm-3. The layer was analyzed with Rutherford backscattering, temperature-dependent Hall effect, and low-temperature photoluminescence measurements. The implantation created a nearly degenerate carrier concentration n of about 2×1019 cm-3, but with a very low mobility μ, increasing from about 0.06 cm2/V s at 20 K to about 2 cm2/V s at 300 K. However, after annealing at 600 °C for 30 min, n increased to about ...


Electrical Characterization Of Ion Implantation Into Gaas, David C. Look Jan 1987

Electrical Characterization Of Ion Implantation Into Gaas, David C. Look

Physics Faculty Publications

Recent advances in the characterization of ion‐implanted samples have included whole wafer mapping (topography) and depth profiling techniques. We review several methods for mapping electrical parameters, including the dark‐spot resistance (DSR), and the microwave photoconductance techniques. In addition, we suggest a new photo‐Hall technique which would allow mobility and carrier‐concentration mapping as well as that of resistivity . Finally, we review methods for obtaining ρ, μ, and depth profiles, with particular emphasis on the application of the magnetoresistance techniques in actual field‐effect transistor structures.


Ohmic Contacts To Al‐Implanted Znse, B. K. Shin, David C. Look, Y. S. Park Mar 1975

Ohmic Contacts To Al‐Implanted Znse, B. K. Shin, David C. Look, Y. S. Park

Physics Faculty Publications

No abstract provided.