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Full-Text Articles in Physics
Oxygen Pressure-Tuned Epitaxy And Optoelectronic Properties Of Laser-Deposited Zno Films On Sapphire, S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, David C. Look
Oxygen Pressure-Tuned Epitaxy And Optoelectronic Properties Of Laser-Deposited Zno Films On Sapphire, S. Choopun, R. D. Vispute, W. Noch, A. Balsamo, R. P. Sharma, T. Venkatesan, A. Iliadis, David C. Look
Physics Faculty Publications
Influence of oxygen pressure on the epitaxy, surface morphology, and optoelectronic properties has been studied in the case of ZnO thin films grown on sapphire ~0001! by pulsed-laser deposition. Results of Rutherford backscattering and ion channeling in conjunction with atomic force microscopy clearly indicate that the growth mode, degree of epitaxy, and the defect density strongly depend on the oxygen background pressure during growth. It is also found that the growth mode and the defects strongly influence the electron mobility, free-electron concentration, and the luminescence properties of the ZnO films. By tuning the oxygen pressure during the initial and the …
Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, David C. Look, Richard J. Molnar, M. A. Khan, G. Simin, V. Adivarahan, M. S. Shur
Low-Frequency Noise In N-Gan With High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, David C. Look, Richard J. Molnar, M. A. Khan, G. Simin, V. Adivarahan, M. S. Shur
Physics Faculty Publications
We report on the results of measurements of low frequency noise in n-type gallium nitride (GaN) grown on sapphire with 300 K electron mobility of 790 cm2/V s. The noise spectra have the form of 1/f noise with a Hooge parameter α of approximately 5×10−2. This value of α is two orders of magnitude smaller than that observed before in n-GaN. The obtained results show that the level of flicker noise in GaN, just like that in GaAs and Si, strongly depends on the structural perfection of the material (the amplitude of the …
Strain Splitting Of The Gamma(5) And Gamma(6) Free Excitons In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, T. C. Collins, M T. Harris, M. J. Callahan, J. S. Bailey
Strain Splitting Of The Gamma(5) And Gamma(6) Free Excitons In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, T. C. Collins, M T. Harris, M. J. Callahan, J. S. Bailey
Physics Faculty Publications
High-quality ZnO crystals have been grown by vapor-phase techniques and by the hydrothermal method. Depending on the surface preparation technique, some hydrothermally grown crystals contain strain. These strains result in energy shifts of the free excitons as well as relaxation of the selection rules. The Γ6 unallowed exciton is observed in these samples without the application of a magnetic field. The Γ6 exciton is also observed to split in a strain field, consistent with the Γ9 symmetry for the top valence band in ZnO. The Γ5 and Γ6 excitons have been observed to split in …
Velocity Distributions Of C Atoms In Co+ Dissociative Recombination: Implications For Photochemical Escape Of C From Mars, Jane L. Fox, Aleksander Hać
Velocity Distributions Of C Atoms In Co+ Dissociative Recombination: Implications For Photochemical Escape Of C From Mars, Jane L. Fox, Aleksander Hać
Physics Faculty Publications
We have carried out Monte Carlo calculations to determine the velocity distributions of C atoms produced by dissociative recombination of CO+ using recent data for the branching ratios of various allowed channels and ion and electron temperatures appropriate to the Martian thermosphere. We find that the fractions of 12C atoms with velocities greater than the escape velocity are ∼ 0.66 and ∼ 0.62, and those for 13C are ∼ 0.47 and ∼ 0.48 at the plasma temperatures characteristic of the exobases at low and high solar activities, respectively. The ratio of the escape fractions of 13C …
Production And Annealing Of Electron Irradiation Damage In Zno, David C. Look, D. C. Reynolds, Joseph W. Hemsky, R. L. Jones, J. R. Sizelove
Production And Annealing Of Electron Irradiation Damage In Zno, David C. Look, D. C. Reynolds, Joseph W. Hemsky, R. L. Jones, J. R. Sizelove
Physics Faculty Publications
High-energy (>1.6 MeV) electrons create acceptors and donors in single-crystal ZnO. Greater damage is observed for irradiation in the [0001] direction (Zn face) than in the [000] direction (O face). The major annealing stage occurs at about 300–325 °C, and is much sharper for defects produced by Zn-face irradiation, than for those resulting from O-face irradiation. The defects appear to have a chain character, rather than being simple, near-neighbor vacancy/interstitial Frenkel pairs. These experiments suggest that ZnO is significantly more “radiation hard” than Si, GaAs, or GaN, and should be useful for applications in high-irradiation environments, such as electronics …
Valence-Band Ordering In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, G. Cantwell, W. C. Harsch
Valence-Band Ordering In Zno, D. C. Reynolds, David C. Look, B. Jogai, C. W. Litton, G. Cantwell, W. C. Harsch
Physics Faculty Publications
The emission and reflection spectra of ZnO have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Free-exciton emission is observed for the first time. Both the Γ5 and Γ6 state excitons associated with top valence band have been identified. This identification has established the valence-band symmetry ordering in ZnO.
Residual Native Shallow Donor In Zno, David C. Look, Joseph W. Hemsky, J. R. Sizelove
Residual Native Shallow Donor In Zno, David C. Look, Joseph W. Hemsky, J. R. Sizelove
Physics Faculty Publications
High-energy electron irradiation in ZnO produces shallow donors at about EC-30meV. Because the production rate is much higher for Zn-face (0001) than O-face (0001̅ ) irradiation, the donor is identified as a Zn-sublattice defect, most likely the interstitial ZnI or a ZnI-related complex. The donor energy is quite close to that of the unirradiated sample, and of other samples discussed in the literature, strongly suggesting that ZnI (and not VO) is the dominant native shallow donor in ZnO. An exceptionally high displacement threshold energy (∼1.6MeV) is quantitatively explained in terms of a …
Dislocation Scattering In Gan, David C. Look, J. R. Sizelove
Dislocation Scattering In Gan, David C. Look, J. R. Sizelove
Physics Faculty Publications
A theory of charged-dislocation-line scattering is developed within the framework of the Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in GaN gives dislocation densities which are in excellent agreement with those measured by transmission electron microscopy. This work shows that threading edge dislocations in GaN indeed are electrically active, in agreement with recent theoretical predictions.