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Series

Wright State University

1995

Articles 1 - 8 of 8

Full-Text Articles in Physics

Depletion Width And Capacitance Transient Formulas For Deep Traps Of High-Concentration, David C. Look, J. R. Sizelove Aug 1995

Depletion Width And Capacitance Transient Formulas For Deep Traps Of High-Concentration, David C. Look, J. R. Sizelove

Physics Faculty Publications

We derive expressions for the depletion width and capacitance transient applicable to traps which may be deep and of high concentration. The new results are compared with those obtained from the commonly used formulas, and also from an exact analysis. Experimental deep level transient spectroscopic data for EL2 in GaAs are in good agreement.

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Stability Of Growing Front Of Yba(2)Cu(3)O(X) Superconductor In The Presence Of Pt And Ceo(2) Additions, Gregory Kozlowski, Tom Svobodny Jul 1995

Stability Of Growing Front Of Yba(2)Cu(3)O(X) Superconductor In The Presence Of Pt And Ceo(2) Additions, Gregory Kozlowski, Tom Svobodny

Physics Faculty Publications

Distinctive microstructures of textured YBa2Cu3Ox (123) superconductors were examined by scanning electron microscopy and metallurgical microscopy. The samples were synthesized under a residual thermal gradient by using a modified melt textured growth on a Y2BaCuO5 (211) substrate. Also, the unidirectional solidification by a zone‐melting method was performed to fabricate 123 superconducting bars up to 12 cm long placed on the 211 substrate in the horizontal arrangement, with a growth rate R=0.5 mm/h and a temperature gradient of G=20 °C/cm (G/R=400 °C h/cm2). A ramping …

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Phonon Replicas In The Photoluminescence Emission Of Alxga1-Xas Alloys, D. C. Reynolds, David C. Look, R. Kaspi, D. N. Talwar Jun 1995

Phonon Replicas In The Photoluminescence Emission Of Alxga1-Xas Alloys, D. C. Reynolds, David C. Look, R. Kaspi, D. N. Talwar

Physics Faculty Publications

Phonon replicas in the photoluminescence spectra of a direct gap AlxGa1−xAs alloy have been observed. The GaAs‐like transverse optical and longitudinal optical as well as AlAs‐like longitudinal optical modes were observed at the Γ‐point. We also observe what we believe to be the longitudinal acoustical phonons at the L‐point in the Brillouin zone.

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Electrical Field Enhanced Thermal Quenching Of A Prominent Thermally Stimulated Current Peak In Semi-Insulating Gaas, Z-Q. Fang, David C. Look May 1995

Electrical Field Enhanced Thermal Quenching Of A Prominent Thermally Stimulated Current Peak In Semi-Insulating Gaas, Z-Q. Fang, David C. Look

Physics Faculty Publications

Detailed experimental results are presented for a ‘‘thermal quenching’’ of thermal stimulated current signals in the most prominent trap in undoped semi‐insulating (SI) GaAs, T5 with an activation energy of 0.27–0.31 eV. A possible model for the thermal quenching of T5 is discussed, emphasizing the thermally stimulated nature of the quenching process, the effect of electric field and the formation of high‐field domains. The thermal quenching of T5 can frequency be observed in SI GaAs grown by the vertical gradient freeze (VGF) technique, or by the liquid encapsulated Czochralski (LEC) technique under certain conditions.

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Convenient Determination Of Concentration And Energy In Deep-Level Transient Spectroscopy, David C. Look, Z-Q. Fang, J. R. Sizelove Feb 1995

Convenient Determination Of Concentration And Energy In Deep-Level Transient Spectroscopy, David C. Look, Z-Q. Fang, J. R. Sizelove

Physics Faculty Publications

For defects or impurities with deep energy levels, such as the commonly observed EL2, EL3, and EL6 in GaAs, it is very important to take account of the so‐called λ effect in order to deduce the correct concentrations of these centers when using capacitance techniques. By measuring capacitance at several forward bias voltages for a given reverse bias voltage it is possible to determine concentration NT and energy ET without requiring the usual emission rate analysis. Convenient formulas for NT and ET are given, although only NT can be determined with a high degree of …

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Monte-Carlo Simulation Of Bulk Hole Transport In Alxga1-Xas, In1-Xalxas, And Gaasxsb1-X, M. J. Martinez, David C. Look, J. R. Sizelove, F. L. Schuermeyer Jan 1995

Monte-Carlo Simulation Of Bulk Hole Transport In Alxga1-Xas, In1-Xalxas, And Gaasxsb1-X, M. J. Martinez, David C. Look, J. R. Sizelove, F. L. Schuermeyer

Physics Faculty Publications

We report a Monte Carlo study of hole transport in AlxGa1−xAs, In1−xAlxAs, and GaAsxSb1−x. The effects of alloy scattering are significant in all three cases, but mobilities are still high enough to be advantageous in particular device applications. We separately calculate the Hall r factors by a Boltzmann transport method and show that these factors are vitally important when attempting to compare Monte Carlo drift mobilities with experimental Hall data.

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A Theoretical Study Concerning The Solar Cycle Dependence Of The Nightside Ionosphere Of Venus, Zoltan Dobe, Andrew F. Nagy, Jane L. Fox Jan 1995

A Theoretical Study Concerning The Solar Cycle Dependence Of The Nightside Ionosphere Of Venus, Zoltan Dobe, Andrew F. Nagy, Jane L. Fox

Physics Faculty Publications

We modeled the chemical and physical processes taking place in the nightside ionosphere of Venus by solving the one dimensional coupled continuity and momentum equations for 12 ion species [CO2+, O2+, O+, H+, NO+, CO+, N2+, N+, He+, C+, O+ (²D) and O+ (²P)]. We investigated the relative importance of the two major processes responsible for maintaining the nightside plasma densities: atomic ion transport from the dayside and impact ionization due to energetic electron precipitation. …

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Demonstration Of Semiconductor Characterization By Phonon Side-Band In Photoluminescence, D. C. Reynolds, David C. Look, D. N. Talwar, G. L. Mccoy, K. R. Evans Jan 1995

Demonstration Of Semiconductor Characterization By Phonon Side-Band In Photoluminescence, D. C. Reynolds, David C. Look, D. N. Talwar, G. L. Mccoy, K. R. Evans

Physics Faculty Publications

In this paper two GaAs samples were investigated; one was a very pure sample grown by chemical-vapor deposition, the other was grown by molecular-beam epitaxy. The dominant optical transition in the high-purity sample was the donor-bound-exciton transition. Phonon sidebands associated with both the free exciton and the donor-bound exciton were observed. The active phonons were the longitudinal-optical (LO) and the transverse-optical (TO) modes associated with both the free exciton and the donor-bound exciton at the Γ point in k space; the TO mode from the donor-bound exciton at the X point, the LO from the free exciton at the L …

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