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Kent State University

2010

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Articles 1 - 2 of 2

Full-Text Articles in Physics

The Ion Capturing Effect Of 5 Degrees Siox Alignment Films In Liquid Crystal Devices, Yi Huang, Philip J. Bos, Achintya Bhowmik Sep 2010

The Ion Capturing Effect Of 5 Degrees Siox Alignment Films In Liquid Crystal Devices, Yi Huang, Philip J. Bos, Achintya Bhowmik

Chemical Physics Publications

We show that SiOx, deposited at 5 degrees to the interior surface of a liquid crystal cell allows for a surprisingly substantial reduction in the ion concentration of liquid crystal devices. We have investigated this effect and found that this type of film, due to its surface morphology, captures ions from the liquid crystal material. Ion adsorption on 5 degrees SiOx film obeys the Langmuir isotherm. Experimental results shown allow estimation of the ion capturing capacity of these films to be more than an order of 10 000/mu m(2). These types of materials are useful for new types ...


The Effect Of Siox Alignment Layer Thickness On The Switching Of Smc* Bistable Liquid Crystal Devices, Mitya Reznikov, Philip J. Bos, Michael J. O'Callaghan Jan 2010

The Effect Of Siox Alignment Layer Thickness On The Switching Of Smc* Bistable Liquid Crystal Devices, Mitya Reznikov, Philip J. Bos, Michael J. O'Callaghan

Chemical Physics Publications

SiOx alignment layers have been shown to allow defect-free SmC* devices with near optimum bistable orientation of the director. In this paper we investigate the effect of the thickness of this type of alignment layer on the required amplitude of an applied voltage pulse to cause bistable switching. The results of an experimental investigation and simple model are presented. We find that for thicker layers, the amplitude is controlled by the voltage drop across the alignment layers and by the effect of polar interactions between the liquid crystal (LC) and the alignment layers. For thin alignment layers the amplitude is ...