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Intervalley Scattering In Gaas And Inp Probed By Pulsed Far‐Infrared Transmission Spectroscopy, Peter N. Saeta, John F. Federici, Benjamin I. Greene, Douglas R. Dykaar
Intervalley Scattering In Gaas And Inp Probed By Pulsed Far‐Infrared Transmission Spectroscopy, Peter N. Saeta, John F. Federici, Benjamin I. Greene, Douglas R. Dykaar
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The dynamics of photoexcited electrons in GaAs and InP were studied using the transmission of 200‐fs pulses of far‐infrared radiation in the spectral range 15–100 cm−1. Kinetic traces of the infrared transmission as a function of delay between optical excitation and infrared probe show a probe‐limited decrease in transmission followed by a more gradual (0.7–2 ps) drop to a steady value, consistent with the slow return of electrons from high‐mass satellite valleys. Infrared transmission spectra, analyzed in the context of a Drude model, reveal density‐dependent electron mobilities 3–4 times below equilibrium n‐doped values. Electron‐hole collisions likely account …
Γ To X Transport Of Photoexcited Electrons In Type Ii Gaas/Alas Multiple Quantum Well Structures, Peter N. Saeta, John F. Federici, R. J. Fischer, Benjamin I. Greene, L. Pfeiffer, R. C. Spitzer, B. A. Wilson
Γ To X Transport Of Photoexcited Electrons In Type Ii Gaas/Alas Multiple Quantum Well Structures, Peter N. Saeta, John F. Federici, R. J. Fischer, Benjamin I. Greene, L. Pfeiffer, R. C. Spitzer, B. A. Wilson
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We report novel femtosecond time‐resolved measurements performed on staggered type II GaAs/AlAs multiple quantum well structures. Photoexcited electrons were determined to transfer from the Γ valley of the GaAs layers to the X valleys of the AlAs in 100 and 400 fs for 8‐ and 11‐monolayer‐thick GaAs samples, respectively.