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Full-Text Articles in Physics
The Impact Of Imperfect Information On Network Attack, A. Melchionna, Jesus Caloca, S. Squires, T. Antonsen, E. Ott, M. Girvan
The Impact Of Imperfect Information On Network Attack, A. Melchionna, Jesus Caloca, S. Squires, T. Antonsen, E. Ott, M. Girvan
McNair Scholars Research Journal
This paper explores the effectiveness of network attack when the attacker has imperfect information about the network. For Erdös-Rényi networks, we observe that dynamical importance and betweenness centrality-based attacks are surprisingly robust to the presence of a moderate amount of imperfect information and are more effective compared with simpler degree-based attacks even at moderate levels of network information error. In contrast, for scale-free networks the effectiveness of attack is much less degraded by a moderate level of information error. Furthermore, in the Erdös-Rényi case the effectiveness of network attack is much more degraded by missing links as compared with the …
Novel Magnetic And Optical Properties Of Sn1-XZnXO2 Nanoparticles, Nevil Franco
Novel Magnetic And Optical Properties Of Sn1-XZnXO2 Nanoparticles, Nevil Franco
McNair Scholars Research Journal
In this work, we report on the effects of doping SnO2 nanoparticles with Zn2+ ions. A series of ~2- 3nm sized Sn1- xZnxO2 crystallite samples with 0 ≤ x ≤ 0.18 were synthesized using a forced hydrolysis method. Increasing dopant concentration caused systematic changes in the crystallite size, oxidation state of Sn, visible emission and band gap of SnO2 nanoparticles. X-ray Diffraction (XRD) studies confirmed the SnO2 phase purity and the absence of any impurity phases. Magnetic measurements at room temperature showed a weak ferromagnetic behavior characterized by an open hysteresis …
Effects Of Finite Layer Thickness On The Differential Capacitance Of Electron Bilayers, J. J. Durrant
Effects Of Finite Layer Thickness On The Differential Capacitance Of Electron Bilayers, J. J. Durrant
McNair Scholars Research Journal
We have calculated the effects of finite thickness on electron or hole layers in double-quantum-well systems. In particular, we apply our model to calculate the Eisenstein ratio and the interlayer capacitance of a biased bilayer device; these are direct measures of the compressibility of the charge carriers in the layers. We show that our model agrees well with the experimental layer-occupancy data for a device of this type. We present results for the regime of negligible interlayer tunneling, zero applied magnetic field, and low layer densities, when the compressibility of one or both layers is negative.