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Rbd2po4: Room Temprature Synthesis, Chemical And Structural Stablity Upon Heating, Masoud Mollaee
Rbd2po4: Room Temprature Synthesis, Chemical And Structural Stablity Upon Heating, Masoud Mollaee
Open Access Theses & Dissertations
Monoclinic RbD2PO4 polycrystals were synthesized via the room temperature crystallization of RbH2PO4 dissolved in D2O. Powder x-ray diffraction (XRD) data collected at T=25 ºC indicate that this deuterated compound crystallizes in space group P21/m with unit cell parameters a=7.688í?, b=6.192í?, c=4.781í? and β=109.02°, and is isomorphic with the intermediate-temperature phase of its hydrogenated counterpart rubidium dihydrogen phosphate (RDP). We found no evidence of previously reported [Phase Transitions 80, 17 (2007)] polymorphic phase transition in rubidium dideuterium phosphate (DRDP) upon heating from room temperature to 210 ºC. All lattice parameters vary smoothly within this temperature range, demonstrating that the P21/m phase …
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Structural, Optical And Electrical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Abhilash Kongu
Open Access Theses & Dissertations
Hafnium oxide (HfO2) has emerged as the most promising high-k dielectric for Metal-Oxide-Semiconductor (MOS) devices and has been highlighted as the most suitable dielectric materials to replace silicon oxide because of its comprehensive performance. In the present research, yttrium-doped HfO2 (YDH) thin films were fabricated using RF magnetron sputter deposition onto Si (100) and quartz with a variable thickness. Cross-sectional scanning electron microscopy coupled with Filmetrics revealed that film thickness values range from 700 A° to 7500 A°. Electrical properties such as AC Resistivity and current-voltage (I-V) characteristics of YDH films were studied. YDH films that were relatively thin (<1500 A°) crystallized in monoclinic phase while thicker films crystallized in cubic phase. The band gap (Eg) of the films was calculated from the optical measurements. The band gap was found to be ∼5.60 eV for monoclinic while it is ∼6.05 eV for cubic phase of YDH films. Frequency dependence of the electrical resistivity (ρac) and the total conductivity of the films were measured. Resistivity decreased (by three orders of magnitude) with increasing frequency from 100 Hz to 1 MHz, attributed due to the hopping mechanism in YDH films. Whereas, while ρac∼1Ω-m at low frequencies (100 Hz), it decreased to ∼ 104 Ω-cm at higher frequencies (1 MHz). Aluminum (Al) metal electrodes were deposited to fabricate a thin film capacitor with YDH layer as dielectric film thereby employing Al-YDH-Si capacitor structure. The results indicate that the capacitance of the films decrease with increasing film thickness. A detailed analysis of the electrical characteristics of YDH films is presented.
Crystal Structure, Phase, And Optical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Alejandro Ortega
Crystal Structure, Phase, And Optical Properties Of Yttrium-Doped Hafnium Oxide Nanocrystalline Thin Films, Alejandro Ortega
Open Access Theses & Dissertations
Yttrium-doped hafnium oxide (YDH) nanocrystalline films were produced by sputter-deposition at various substrate times and temperatures, to produce YDH films in a wide range of thicknesses, dYDH∼25 to 1100 nm. The deposition was made onto optical grade quartz and sapphire substrates. Samples deposited on sapphire were subject to post-deposition annealing (PDA) at various times (3-24 hr) and temperatures (1100 - 1500 °C). The effect of d[special characters omitted]YDH on the crystal structure, surface/interface morphology and optical properties of YDH films was investigated. X-ray diffraction analyses revealed the formation of monoclinic phase for relatively thin films (<150nm). The evolution towards stabilized cubic phase with increasing dYDH [special characters omitted]is observed. The scanning electron microscopy results indicate the dense, columnar structure of YDH films as a function of dYDH. Spectrophotometry analyses indicate that the grown YDH films are transparent and exhibit interference fringes. The band gap was found to be ∼ 5.60 eV for monoclinic YDH films while distinct separation and an increase in band gap to 6.03 eV is evident with increasing dYDH and formation cubic YDH films. The PDA films band gaps were found to be between 5.31 and 5.72 eV, all of which exhibit secondary gaps. A correlation between growth conditions, annealing, phase evolution, and optical properties of the YDH nanocrystalline thin films is established.