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- Computer simulation (2)
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- Entropy (1)
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Articles 1 - 3 of 3
Full-Text Articles in Physics
Entopic Lattice Boltzmann Representations Required To Recover Navier Stokes Flows, Brian Keating, George Vahala, Jeffrey Yepez, Min Soe, Linda L. Vahala
Entopic Lattice Boltzmann Representations Required To Recover Navier Stokes Flows, Brian Keating, George Vahala, Jeffrey Yepez, Min Soe, Linda L. Vahala
Electrical & Computer Engineering Faculty Publications
There are two disparate formulations of the entropic lattice Boltzmann scheme: one of these theories revolves around the analog of the discrete Boltzmann H function of standard extensive statistical mechanics, while the other revolves around the nonextensive Tsallis entropy. It is shown here that it is the nonenforcement of the pressure tensor moment constraints that lead to extremizations of entropy resulting in Tsallis-like forms. However, with the imposition of the pressure tensor moment constraint, as is fundamentally necessary for the recovery of the Navier-Stokes equations, it is proved that the entropy function must be of the discrete Boltzmann form. Three-dimensional …
Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson
Tio2 Breakdown Under Pulsed Conditions, G. Zhao, R. P. Joshi, V. K. Lakdawala, E. Schamiloglu, H. Hjalmarson
Electrical & Computer Engineering Faculty Publications
Model studies of current conduction and breakdown in TiO2 were carried out. Our simulation results indicate that electrical breakdown of TiO2 under multiple-pulsed conditions can occur at lower voltages as compared to quasi-dc biasing. This is in agreement with recent experimental data and is indicative of a cumulative phenomena. We demonstrate that the lower breakdown voltages observed in TiO2 under pulsed conditions is a direct rise-time effect, coupled with successive detrapping at the grain boundaries. 2007 American Institute of Physics.
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Formation Of In- (2×1) And In Islands On Si (100) - (2×1) By Femtosecond Pulsed Laser Deposition, M. A. Hafez, H. E. Elsayed-Ali
Electrical & Computer Engineering Faculty Publications
The growth of indium on a vicinal Si (100) - (2×1) surface at room temperature by femtosecond pulsed laser deposition (fsPLD) was investigated by in situ reflection high-energy electron diffraction (RHEED). Recovery of the RHEED intensity was observed between laser pulses and when the growth was terminated. The surface diffusion coefficient of deposited In on initial two-dimensional (2D) In- (2×1) layer was determined. As growth proceeds, three-dimensional In islands grew on the 2D In- (2×1) layer. The RHEED specular profile was analyzed during film growth, while the grown In islands were examined by ex situ atomic force microscopy. The full …