Physics Commons^™

A New Silicon Phase With Direct Band Gap And Novel Optoelectronic Properties, Yaguang Guo, Qian Wang, Yoshiyuki Kawazoe, Puru Jena

Physics Publications

Due to the compatibility with the well-developed Si-based semiconductor industry, there is considerable interest in developing silicon structures with direct energy band gaps for effective sunlight harvesting. In this paper, using silicon triangles as the building block, we propose a new silicon allotrope with a direct band gap of 0.61 eV, which is dynamically, thermally and mechanically stable. Symmetry group analysis further suggests that dipole transition at the direct band gap is allowed. In addition, this new allotrope displays large carrier mobility (~104 cm/V · s) at room temperature and a low mass density (1.71 g/cm3), making …

Using Graphene To Control Magnetic Anisotropy And Interaction Between Supported Clusters, Sanjubala Sahoo, M Fhokrul Islam, Shiv N. Khanna

Physics Publications

Stabilization of magnetic order in clusters/nanoparticles at elevated temperatures is a fundamentally challenging problem. The magnetic anisotropy energy (MAE) that prevents the thermal fluctuations of the magnetization direction can be around 1–10 K in free transition metal clusters of around a dozen atoms. Here we demonstrate that a graphene support can lead to an order of magnitude enhancement in the anisotropy of supported species. Our studies show that the MAE of supported Co5 and Co13 clusters on graphene increase by factors of 2.6 and 25, respectively. The enhancement is linked to the splitting of selected electronic orbitals that leads to …

Identification Of Point Defects In Hvpe-Grown Gan By Steady-State And Time-Resolved Photoluminescence, Michael A. Reshchikov, Denis O. Demchenko, A Usikov, H Helava, Yu. Makarov

Forensic Science Publications

We have investigated point defects in GaN grown by HVPE by using steady-state and time-resolved photoluminescence (PL). Among the most common PL bands in this material are the red luminescence band with a maximum at 1.8 eV and a zero-phonon line (ZPL) at 2.36 eV (attributed to an unknown acceptor having an energy level 1.130 eV above the valence band), the blue luminescence band with a maximum at 2.9 eV (attributed to ZnGa), and the ultraviolet luminescence band with the main peak at 3.27 eV (related to an unknown shallow acceptor). In GaN with the highest quality, the dominant defect-related …

Defect-Related Luminescence In Undoped Gan Grown By Hvpe, Michael A. Reshchikov, A Usikov, H Helava, Yu. Makarov

Forensic Science Publications

Hydride vapor phase epitaxy (HVPE) is used for the growth of low-defect GaN. We have grown undoped films on sapphire and investigated them using steady-state and time-resolved photoluminescence (PL). One of the dominant PL bands in high-quality GaN grown by HVPE is the green luminescence (GL) band with a maximum at 2.4 eV. This PL band can be easily recognized in time-resolved PL measurements due to its exponential decay even at low temperatures (<50 K), with a characteristic lifetime of 1–2 μs. As the temperature increases from 70 K to 280 K, the PL lifetime for the GL band increases by an order of magnitude. This …

Enhanced Nanopore Detection Via Diffusion Gradients And Optical Tweezers, Kyle T. Brady

Theses and Dissertations

Nanopore-based resistive pulse sensing represents an important class of single-molecule measurements. It provides information about many molecules of interest (i.e. DNA, proteins, peptides, clusters, polymers, etc.) without the need for labeling. Two experiments that are especially well suited for studying with nanopore sensors are DNA sequencing and DNA-protein force measurements. This thesis will describe progress that has been made in both areas.

DNA sequencing has become an active area of research for stochastic single-molecule sensing, with many researchers striving for the ultimate goal of single-molecule de novo DNA sequencing. One intriguing method towards that goal involves the use of a …

Λcdm Cosmology + Chaotic Inflation, Peter A. Farago

Theses and Dissertations

ΛCDM cosmology is described in terms of general relativity and the Robertson-Walker metric. The evolution of the observable universe, currently dominated by dark energy (Λ) and cold dark matter (CDM), is presented in terms of its thermal history. CDM is extended to include an inflation epoch that accelerates the early expansion rate to near exponential levels. It is shown that inflation solves several problems in CDM and produces perturbations in the metric that lead to the observed anisotropies in the Cosmic Microwave Background and the formation of large scale cosmological structures. Various theories of inflation are explored. Predictions of inflation …

Femtosecond Laser Beam Propagation Through Corneal Tissue: Evaluation Of Therapeutic Laser-Stimulated Second And Third-Harmonic Generation, William R. Calhoun Iii

Theses and Dissertations

One of the most recent advancements in laser technology is the development of ultrashort pulsed femtosecond lasers (FSLs). FSLs are improving many fields due to their unique extreme precision, low energy and ablation characteristics. In the area of laser medicine, ophthalmic surgeries have seen very promising developments. Some of the most commonly performed surgical operations in the world, including laser-assisted in-situ keratomileusis (LASIK), lens replacement (cataract surgery), and keratoplasty (cornea transplant), now employ FSLs for their unique abilities that lead to improved clinical outcome and patient satisfaction.

The application of FSLs in medical therapeutics is a recent development, and although …

Surface Photovoltage Transients For P-Type Algan, Karen L. Phumisithikul

Theses and Dissertations

There is an understanding of surface photovoltage (SPV) behavior for GaN, yet little is known about the SPV behavior for AlGaN. In this work, a Kelvin probe was used to measure the SPV for p-type AlGaN. Very slow SPV transients were found in AlGaN, which could not be explained with a simple thermionic model. A possible explanation of this behavior is the segregation of impurities to the surface, which causes significant reduction of the depletion region width (down to 2 nm), with carrier tunneling and hopping becoming the dominant mechanisms responsible for the SPV transients. To verify this assumption, …

Silicon Nanostructures For High Capacity Anodes In Lithium Ion Batteries, Tyler M. Selden

Theses and Dissertations

In this study we looked at several different silicon nanostructures grown for the purpose of optimizing anodes for lithium ion batteries. We primarily focused on two distinct types of structures, nanospirals, and Rugate structures. The samples were designed to have the mechanical robustness to endure the massive expansion caused by lithiation of silicon. All of the samples were grown using an electron beam evaporator. Scanning electron microscope images show that we have achieved the desired structural growth. The spirals were shown to have an average diameter of 343 nm on polished copper, and 366 nm on unpolished copper. The Rugate …