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Low Temperature Silicon Epitaxy On Hydrogen Terminated Si(100) Surfaces, J. -Y. Ji, T. -C. Shen
Low Temperature Silicon Epitaxy On Hydrogen Terminated Si(100) Surfaces, J. -Y. Ji, T. -C. Shen
T. -C. Shen
Si deposition on H terminated Si(001)-2×1 surfaces at temperatures 300–530K is studied by scanning tunneling microscopy. Hydrogen apparently hinders Si adatom diffusion and enhances surface roughening. The post-growth annealing effect is analyzed. Hydrogen is shown to remain on the growth front up to at least 10ML. Si deposition onto the H/Si(001)-3×1 surface at 530K suggests that dihydride units further suppress Si adatom diffusion and increase surface roughness.