Physics Commons^™

Magnetoelectric Memory Cells With Domain-Wall-Mediated Switching, Kirill Belashchenko, Oleg Tchernyshyov, Alexey Kovalev, Dmitri Nikonov

Kirill Belashchenko Publications

A magnetoelectric memory cell with domain - wall - mediated switching is implemented using a split gate architecture . The split gate architecture allows a domain wall to be trapped within a magnetoelectric antiferromagnetic ( MEAF ) active layer . An extension of this architecture applies to multiple gate linear arrays that can offer advantages in memory density , programmability , and logic functionality . Applying a small anisotropic in - plane shear strain to the MEAF can block domain wall precession to improve reliability and speed of switching