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Full-Text Articles in Physics
Multiferroic Hexagonal Ferrites (H-Rfeo3, R=Y, Dy-Lu): An Experimental Review, Xiaoshan Xu, Wenbin Wang
Multiferroic Hexagonal Ferrites (H-Rfeo3, R=Y, Dy-Lu): An Experimental Review, Xiaoshan Xu, Wenbin Wang
Xiaoshan Xu Papers
Hexagonal ferrites (h-RFeO3, R=Y, Dy-Lu) have recently been identified as a new family of multiferroic complex oxides. The coexisting spontaneous electric and magnetic polarizations make h-RFeO3 rare-case ferroelectric ferromagnets at low temperature. Plus the room-temperature mul- tiferroicity and predicted magnetoelectric effect, h-RFeO3 are promising materials for multiferroic applications. Here we review the structural, ferroelectric, magnetic, and magnetoelectric properties of h-RFeO3. The thin film growth is also discussed because it is critical in making high quality single crystalline materials for studying intrinsic properties.
Structural And Electronic Origin Of The Magnetic Structures In Hexagonal Lufeo3, Hongwei Wang, Igor V. Solovyev, Wenbin Wang, Xiao Wang, Philip J. Ryan, David J. Keavney, Jong-Woo Kim, Thomas Z. Ward, Leyi Zhu, Jian Shen, X. M. Cheng, Lixin He, Xiaoshan Xu, Xifan Wu
Structural And Electronic Origin Of The Magnetic Structures In Hexagonal Lufeo3, Hongwei Wang, Igor V. Solovyev, Wenbin Wang, Xiao Wang, Philip J. Ryan, David J. Keavney, Jong-Woo Kim, Thomas Z. Ward, Leyi Zhu, Jian Shen, X. M. Cheng, Lixin He, Xiaoshan Xu, Xifan Wu
Xiaoshan Xu Papers
Using combined theoretical and experimental approaches, we studied the structural and electronic origin of the magnetic structure in hexagonal LuFeO3. Besides showing the strong exchange coupling that is consistent with the high magnetic ordering temperature, the previously observed spin reorientation transition is explained by the theoretically calculated magnetic phase diagram. The structural origin of this spin reorientation that is responsible for the appearance of spontaneous magnetization, is identified by theory and verified by x-ray diffraction and absorption experiments.
Active Control Of Magnetoresistance Of Organic Spin Valves Using Ferroelectricity, Dali Sun, Mei Fang, Xiaoshan Xu, Lu Jiang, Hangwen Guo, Yanmei Wang, Wenting Yang, Lifeng Yin, Paul C. Snijders, T. Z. Ward, Zheng Gai, X. -G. Zhang, Ho Nyung Lee, Jian Shen
Active Control Of Magnetoresistance Of Organic Spin Valves Using Ferroelectricity, Dali Sun, Mei Fang, Xiaoshan Xu, Lu Jiang, Hangwen Guo, Yanmei Wang, Wenting Yang, Lifeng Yin, Paul C. Snijders, T. Z. Ward, Zheng Gai, X. -G. Zhang, Ho Nyung Lee, Jian Shen
Xiaoshan Xu Papers
Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of organic spin valves is generally achieved by the alignment of the magnetization directions of the two ferromagnetic electrodes, generating magnetoresistance. Here we employ a new knob to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer: the magnetoresistance of the spin valve depends strongly on the history of the bias voltage, …