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Full-Text Articles in Physics
Electron And Hole Traps In Ag-Doped Lithium Tetraborate (Li2b4o7) Crystals, A. T. Brant, B. E. Kananan, M. K. Murari, J. Mcclory, J. C. Petrosky, V. T. Adamiv, Ya. V. Burak, Peter A. Dowben, L. E. Halliburton
Electron And Hole Traps In Ag-Doped Lithium Tetraborate (Li2b4o7) Crystals, A. T. Brant, B. E. Kananan, M. K. Murari, J. Mcclory, J. C. Petrosky, V. T. Adamiv, Ya. V. Burak, Peter A. Dowben, L. E. Halliburton
Peter Dowben Publications
Electron paramagnetic resonance (EPR), electron-nuclear double resonance (ENDOR), and thermoluminescence (TL) are used to characterize the primary electron and hole trapping centers in a lithium tetraborate (Li2B4O7) crystal doped with Ag+. Three defects, two holelike and one electronlike, are observed after exposure at room temperature to 60 kV x-rays. The as-grown crystal contains both interstitial Ag+ ions and Ag+ ions substituting for Liþ ions. During the irradiation, substitutional Ag+ ions (4d10) trap holes and two distinct Ag2+ centers (4d9) are formed. These Ag2+ …
Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Resonant Photoemission Of Rare Earth Doped Gan Thin Films, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Peter Dowben Publications
The 4d → 4f Fano resonances for various rare earth doped GaN thin films (RE = Gd, Er, Yb) were investigated using synchrotron photoemission spectroscopy. The resonant photoemission Fano profiles show that the major Gd and Er rare earth 4f weight is at about 5–6 eV below the valence band maximum, similar to the 4f weights in the valence band of many other rare earth doped semiconductors. For Yb, there is very little resonant enhancement of the valence band of Yb doped GaN, consistent with a largely 4f14 occupancy.
Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Schottky Barrier Formation At The Au To Rare Earth Doped Gan Thin Film Interface, S. R. Mchale, J. W. Mcclory, J. C. Petrosky, J. Wu, R. Palai, Yaroslav B. Losovyj, Peter A. Dowben
Peter Dowben Publications
The Schottky barriers formed at the interface between gold and various rare earth doped GaN thin films (RE = Yb, Er, Gd) were investigated in situ using synchrotron photoemission spectroscopy. The resultant Schottky barrier heights were measured as 1.68 ± 0.1 eV (Yb:GaN), 1.64 ± 0.1 eV (Er:GaN), and 1.33 ± 0.1 eV (Gd:GaN). We find compelling evidence that thin layers of gold do not wet and uniformly cover the GaN surface, even with rare earth doping of the GaN. Furthermore, the trend of the Schottky barrier heights follows the trend of the rare earth metal work function.