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Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Defect-Mediated Properties Of Magnetic Tunnel Junctions, Julian P. Velev, Mikhail Ye Zhuravlev, Kirill D. Belashchenko, Sitaram S. Jaswal, Evgeny Y. Tsymbal, T. Katayama, S. Yuasa
Evgeny Tsymbal Publications
Defects play an important role in the properties of metal oxides which are currently used as barrier layers in magnetic tunnel junctions (MTJs). We study the effect of O vacancies on the interlayer exchange coupling (IEC) and tunneling magnetoresistance (TMR) in Fe–MgO–Fe tunnel junctions. Measurements of IEC in fully epitaxial Fe–MgO–Fe(001) tunnel junctions show IEC is antiferromagnetic (AFM) for small MgO thickness but changes sign and then vanishes for large barrier thickness. First-principles calculations based on density functional theory demonstrate that the presence of neutral O vacancies (F-centers) in the MgO barrier can explain this behavior. Resonant tunneling …